datasheetq language:
Главная >>> Fairchild >>> NDS9933A Даташит

NDS9933A Даташит

Номер в каталогеNDS9933A Fairchild
Fairchild Semiconductor Fairchild
Компоненты ОписаниеDual P-Channel Enhancement Mode Field Effect Transistor
NDS9933A Datasheet PDF : NDS9933A pdf   
NDS9933A Datasheet

General Description
This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage apllications such as DC motor control and DC/DC conversion where fast switching,low in-line power loss, and resistance to transients are

• -2.8 A, -20 V. RDS(on) = 0.14 Ω @ VGS = -4.5 V
                    RDS(on) = 0.19 Ω @ VGS = -2.7 V
                    RDS(on) = 0.20 Ω @ VGS = -2.5 V.
• High density cell design for extremely low RDS(on).
• High power and current handling capability in a widely used surface mount package.
• Dual MOSFET in surface mount package.

Share Link : Fairchild

NDS9933A Другие запросы, связанные с производителем

NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor NDS9933A View National ->Texas Instruments
National ->Texas Instruments  

Searches related to NDS9933A description

@ 2016  [ Home  ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]