NE3210S01-T1 Datasheet - NEC => Renesas Technology
Part Name
NE3210S01-T1
Other PDF
not available.
PDF
page
16 Pages
File Size
44.6 kB
MFG CO.
NEC => Renesas Technology
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
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Part Name
Description
PDF
MFG CO.
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