ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION
The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications

FEATURES
• VERY LOW NOISE FIGURE:
   0.45 dB Typical at 12 GHz
• HIGH ASSOCIATED GAIN:
   12.5 dB Typical at 12 GHz
• LG ≤ 0.20 µm, WG = 200 µm
• LOW COST METAL CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE