NE434S01-T1 Datasheet - NEC => Renesas Technology
Part Name
NE434S01-T1
Other PDF
not available.
PDF
page
12 Pages
File Size
63.9 kB
MFG CO.
NEC => Renesas Technology
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.
FEATURES
⢠Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz
⢠Gate Width: Wg = 280 Pm
|
|
Part Name
Description
PDF
MFG CO.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
NEC's C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
California Eastern Laboratories.
Share Link: