Integrated circuits, Transistor, Semiconductors Free Datasheet Search and Download Site

RQA0009TXDQS Datasheet

Part NameRQA0009TXDQS Renesas
Renesas Electronics Renesas
DescriptionSilicon N-Channel MOS FET
PDF DOWNLOAD     


RQA0009TXDQS image

Features
• High Output Power, High Gain, High Efficiency
   Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
   (VDS = 6 V, f = 520 MHz)
• Compact package capable of surface mounting
• Electrostatic Discharge Immunity Test
   (IEC Standard, 61000-4-2, Level4)

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13 
Share Link : 

HOME 'RQA0009TXDQS' Search



Searches related to RQA0009TXDQS description

[ ETC 2SK1313L ]   [ ETC 2SK1313S ]   [ ETC 2SK1314L ]   [ ETC 2SK1314S ]   [ ETC 2SK554 ]   [ ETC 2SK555 ]   [ ETC K554 ]   [ ETC K555 ]   [ ETC 2SK552 ]   [ Hitachi 2SK1341 ]  

Language : 한국어     日本語     русский     简体中文     español
@ 2015 - 2018  [ Home  ] [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]