SFT2010 Datasheet - Solid State Devices, Inc.
Part Name
SFT2010
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2 Pages
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MFG CO.
Solid State Devices, Inc.
200 AMP 100 â 140 Volt High Energy NPN Transistor
Features:
⢠BVCBO= 250 V MIN
⢠600 Watts Power Dissipation
⢠Excellent SOA Curve
⢠Es/b of 800mJ
⢠Gain of over 5 at 200A
⢠High Reliability Construction
⢠Planar Chip Construction with Low Leakage and Very Fast Switching
⢠TX, TXV, S-Level Screening Available2/-Consult Factory
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