MFG CO.
Sony Semiconductor
Description
The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
Features
⢠Low voltage operation
⢠Low noise: NF = 1.5dB (typ.) at 900MHz
⢠High gain: Ga = 18dB (typ.) at 900MHz
⢠Low cross-modulation
⢠High stability
⢠Built-in gate-protection diode
⢠Standard SOT-143 package
Application
UHF band amplifier, mixer and oscillator
Part Name
Description
PDF
MFG CO.
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
Hitachi -> Renesas Electronics
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
GaAs N-Channel Dual Gate MES Type Field Effect Transistor
Toshiba
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEC => Renesas Technology