Product Description
Stanford Microdevicesâ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.
Product Features
⢠Patented GaAs Heterostructure FET Technology
⢠+30dBm Output Power at 1dB Compression
⢠+46dBm Output IP3
⢠High Drain Efficiency: Up to 40% at Class AB
⢠13 dB Gain at 900MHz (Application circuit)
⢠13 dB Gain at 1900MHz (Application circuit)
Applications
⢠Analog and Digital Wireless System
⢠Cellular PCS, CDPD, Wireless Data, Pagers
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