Product Description
Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Product Features
• Patented GaAs Heterostructure FET Technology
• +30dBm Output Power at 1dB Compression
• +46dBm Output IP3
• High Drain Efficiency: Up to 40% at Class AB
• 13 dB Gain at 900MHz (Application circuit)
• 13 dB Gain at 1900MHz (Application circuit)

Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers