General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
• –11.5 A, –20 V. RDS(ON) = 12 m⦠@ VGS = –4.5 V
RDS(ON) = 17.5 m⦠@ VGS = –2.5 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Applications
• Power management
• Load switch
• Battery protection
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