DESCRIPTION
The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
â MEDIUM VOLTAGE CAPABILITY
â NPN TRANSISTORS
â LOW SPREAD OF DYNAMIC PARAMETERS
â MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
â VERY HIGH SWITCHING SPEED
â THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX â-1â)
APPLICATIONS:
â ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
â SWITCH MODE POWER SUPPLIES
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