DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds
â HIGH VOLTAGE CAPABILITY
â NPN TRANSISTOR
â LOW SPREAD OF DYNAMIC PARAMETERS
â MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
â VERY HIGH SWITCHING SPEED
APPLICATIONS
â ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
â SWITCH MODE POWER SUPPLIES
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