Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh⢠K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
â Industryâs lowest RDS(on) x area
â Industryâs best FoM (figure of merit)
â Ultra-low gate charge
â 100% avalanche tested
â Zener-protected
Applications
â Switching applications
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