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STD2NM60-1 Datasheet - STMicroelectronics

STD2NM60-1 Datasheet PDF STMicroelectronics

Part Name
STD2NM60-1

Other PDF
  not available.

page
10 Pages

File Size
391 kB

MFG CO.
ST-Microelectronics
STMicroelectronics ST-Microelectronics

DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
   
■ TYPICAL RDS(on) = 2.8 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDmesh™ family is very suitable for increase
    the power density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   

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