DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
â POLYSILICON GATE VOLTAGE DRIVEN
â LOW THRESHOLD VOLTAGE
â LOW ON-VOLTAGE DROP
â LOW GATE CHARGE
â HIGH CURRENT CAPABILITY
â HIGH VOLTAGE CLAMPING FEATURE
APPLICATIONS
â AUTOMOTIVE IGNITION
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