Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET⢠DeepGATE⢠technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Features
⢠RDS(on) * Qg industry benchmark
⢠Extremely low on-resistance RDS(on)
⢠High avalanche ruggedness
⢠Low gate drive power losses
Applications
⢠Switching applications
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