Description
These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh⢠technology. It applies the benefits of the multiple drain process to STMicroelectronicsâ well-known PowerMESH⢠horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.
â 100% avalanche tested
â Low input capacitance and gate charge
â Low gate input resistance
Application
Switching applications
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