STP19NM65N Datasheet - STMicroelectronics
Part Name
STP19NM65N
Other PDF
not available.
PDF
page
19 Pages
File Size
501.7 kB
MFG CO.
STMicroelectronics
Description
This series of devices implements the second generation of MDmesh⢠Technology. This revolutionary Power MOSFET associates a new vertical structure to the Companyâs strip layout to yield one of the worldâs lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Features
â 100% avalanche tested
â Low input capacitance and gate charge
â Low gate input resistance
Application
â Switching applications
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Part Name
Description
PDF
MFG CO.
N-channel 500V - 0.34⦠- 14A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-protected SuperMESHTM Power MOSFET
Unspecified
N-CHANNEL 600V-0.48â¦-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⢠Power MOSFET
STMicroelectronics
N-channel 800V - 0.78â¦- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
Silicon Carbide (SiC) Schottky Diode â EliteSiC, 50 A, 650 V, D2, TO-247-2L
ON Semiconductor
Silicon Carbide (SiC) Schottky Diode â EliteSiC, 40 A, 650 V, D2, TO-247-3L
ON Semiconductor
Silicon Carbide (SiC) Schottky Diode â EliteSiC, 10 A, 650 V, D2, TO-247-2L
ON Semiconductor
Silicon Carbide (SiC) Schottky Diode â EliteSiC, 30 A, 650 V, D2, TO-247-2L
ON Semiconductor
Silicon Carbide (SiC) Schottky Diode â EliteSiC, 20 A, 650 V, D2, TO-247-3L
ON Semiconductor
Silicon Carbide (SiC) Schottky Diode â EliteSiC, 12 A, 650 V, D2, TO-247-3L
ON Semiconductor
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