DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique â Single Feature Sizeï â strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
â TYPICAL RDS(on) = 0.06 â¦
â EXCEPTIONAL dv/dt CAPABILITY
â 100% AVALANCHE TESTED
â LOW GATE CHARGE 100 °C
â APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â SOLENOID AND RELAY DRIVERS
â MOTOR CONTROL, AUDIO AMPLIFIERS
â DC-DC & DC-AC CONVERTERS
â AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
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