DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series comple ments ST full range of high voltage MOSFETs in cluding revolutionary MDmesh™ products.
â TYPICAL RDS(on) = 2.3 â¦
â EXTREMELY HIGH dv/dt CAPABILITY
â 100% AVALANCHE TESTED
â GATE CHARGE MINIMIZED
â VERY LOW INTRINSIC CAPACITANCES
â VERY GOOD MANUFACTURING REPEATIBILITY
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