Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh⢠K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
⢠Industryâs lowest RDS(on) x area
⢠Industryâs best FoM (figure of merit)
⢠Ultra-low gate charge
⢠100% avalanche tested
⢠Zener-protected
Applications
⢠Switching applications
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