N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
â TYPICAL RDS(on)= 0.012 â¦
â AVALANCHE RUGGED TECHNOLOGY
â 100% AVALANCHE TESTED
â REPETITIVE AVALANCHE DATA AT 100°C
â LOW GATE CHARGE
â HIGH CURRENT CAPABILITY
â 175°C OPERATING TEMPERATURE
â VERY LOW RDS (on)
â APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â SOLENOID AND RELAY DRIVERS
â REGULATORS
â DC-DC & DC-AC CONVERTERS
â MOTOR CONTROL, AUDIO AMPLIFIERS
â AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
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