DESCRIPTION
The third generation of MESH OVERLAY⢠Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
â TYPICAL RDS(on) = 1.55â¦
â EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
â 100% AVALANCHE TESTED
â VERY LOW GATE INPUT RESISTANCE
APPLICATIONS
â SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
â WELDING EQUIPMENT
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