DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronics unique âSingle Feature Sizeâ¢â stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
â TYPICAL RDS(on) = 0.004 â¦
â EXCEPTIONAL dv/dt CAPABILITY
â 100% AVALANCHE TESTED
â LOW THRESHOLD DRIVE
APPLICATIONS
â HIGH CURRENT, HIGH SPEED SWITCHING
â MOTOR CONTROL, AUDIO AMPLIFIERS
â DC-DC & DC-AC CONVERTERS
â AUTOMOTIVE ENVIRONMENT
(INJECTION,ABS, AIR-BAG ,LAMPDRIVERS
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