Device Description
This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture.
Product Overview
The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of the deviceâs memory map. The rest of the memory array is grouped into 32 Kword main blocks.
Product Features
â Flexible SmartVoltage Technology
â2.7 Vâ 3.6 V Read/Program/Erase
â12 V for Fast Production Programming
â 1.65 Vâ2.5 V or 2.7 Vâ3.6 V I/O Option
âReduces Overall System Power
â High Performance
â2.7 Vâ 3.6 V: 70 ns Max Access Time
â Optimized Architecture for Code Plus Data Storage
âEight 4 Kword Blocks, Top or Bottom Parameter Boot
âUp to One Hundred-Twenty-Seven 32 Kword Blocks
âFast Program Suspend Capability
âFast Erase Suspend Capability
â Flexible Block Locking
âLock/Unlock Any Block
âFull Protection on Power-Up
âWP# Pin for Hardware Block Protection
â Low Power Consumption
â9 mA Typical Read
â7 A Typical Standby with Automatic Power Savings Feature (APS)
â Extended Temperature Operation
ââ40 °C to +85 °C
â 128-bit Protection Register
â64 bit Unique Device Identifier
â64 bit User Programmable OTP Cells
â Extended Cycling Capability
âMinimum 100,000 Block Erase Cycles
â Software
âIntel® Flash Data Integrator (FDI)
âSupports Top or Bottom Boot Storage, Streaming Data (e.g., voice)
âIntel Basic Command Set
âCommon Flash Interface (CFI)
â Standard Surface Mount Packaging
â48-Ball µBGA*/VFBGA
â64-Ball Easy BGA Packages
â48-Lead TSOP Package
â ETOX⢠VIII (0.13 µm) Flash Technology
â16, 32 Mbit
â ETOX⢠VII (0.18 µm) Flash Technology
â16, 32, 64 Mbit
â ETOX⢠VI (0.25 µm) Flash Technology
â8, 16 and 32 Mbit
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