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TLP421F Datasheet

Part NameTLP421F Toshiba
Toshiba Toshiba
DescriptionTOSHIBA Photocoupler GaAs IRed & Photo−Transistor
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TLP421F image

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The TOSHIBA TLP421F consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)).
Absolute maximum ratings and electrical characteristics are the same as TLP421 technical datasheet.

• Collector−emitter voltage: 80V (min)
• Current transfer ratio: 50% (min)
   Rank GB: 100% (min)
• Isolation voltage: 5000 Vrms (min)
• UL recognized: UL1577
• BSI approved:
   BS EN60065: 2002
   Approved no. 8411
   BS EN60950-1: 2002
   Approved no. 8412
• SEMKO approved: EN60065, EN60950, EN60335
   Approved no. 9910249 / 01
• Option (D4) type
   TUV approved:
         DIN EN 60747-5-2
         Approved no. 40010944
      Maximum operating insulation voltage: 1130VPK
      Maximum permissible over voltage: 8000VPK
   (Note): When an EN 60747-5-2 approved type is needed,
      please designate the “ Option (D4) ”
   Making VDE application: DIN EN 60747-5-2

 

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