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UD61464DC08 Datasheet - Zentrum Mikroelektronik Dresden AG

UD61464DC08 Datasheet PDF Zentrum Mikroelektronik Dresden AG

Part Name
UD61464DC08

Description

Other PDF
  not available.

page
14 Pages

File Size
170.1 kB

MFG CO.
Zentrum
Zentrum Mikroelektronik Dresden AG Zentrum

Description
Addressing
The UD61466 is a dynamic random access memory organized 65536 words by 4 bits.
SCM facilitates faster data operation with predefined row address. Via 8 address inputs the 16 address bits are transmitted into the internal address memories in a time-multiplex operation.

Features
❐ Dynamic random access memory 65536 x 4 bits manufactured using a CMOS technology
❐ RAS access times 70 ns/80 ns
❐ TTL-compatible
❐ Three-state outputs bidirectional
❐ 256 refresh cycles 4 ms refresh cycle time
❐ STATIC COLUMN MODE
❐ Operating modes: Read, Write, Read - Write, RAS only Refresh, Hidden Refresh with address transfer
❐ Low power dissipation
❐ Power supply voltage 5 V
❐ Package PDIP18 (300 mil)
❐ Operating temperature range 0 to 70 °C
❐ Quality assessment according to CECC 90000, CECC 90100 and CECC 90112

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Part Name
Description
PDF
MFG CO.
64k x 16 Embedded EDO DRAM
G-Link Technology
4 MEG x 4 DRAM
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64K X 16 DRAM FAST PAGE MODE
Unspecified
64K WORD X 16 BIT EDO DRAM
Utron Technology Inc
4 MEG x 4 FPM DRAM
Micron Technology
4 MEG x 4 EDO DRAM
Micron Technology
1 MEG x 4 DRAM
Micron Technology
1 MEG x 4 DRAM Fast Page Mode DRAM
Austin Semiconductor
1 MEG x 4 DRAM Fast Page Mode DRAM
Austin Semiconductor
16 MEG x 4 EDO DRAM
Micron Technology

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