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5962F9862201VCC Datasheet - Intersil

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MFG CO.
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Radiation Hardened Triple 3-Input AND Gate

The Radiation Hardened ACS11MS is a Triple 3-Input AND Gate. When all three inputs to one of the gates are at a HIGH level, the corresponding Y output will be HIGH. A LOW level on any input will cause the output for that gate to be LOW. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.

Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105RAD (Si)
- SEU Immunity . . . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels . . . . VIL= (0.3)(VCC), VIH= (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . ±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . .12ns (Max)

Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs

Page Link's: 1  2 
 

Part Name
Description
PDF
MFG CO.
Radiation Hardened Triple 3-Input AND Gate
Intersil
Radiation Hardened Triple 3-Input AND Gate
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Radiation Hardened Triple 3-Input NOR Gate
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Radiation Hardened Triple 3-Input NAND Gate
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Radiation Hardened Triple 3-Input NOR Gate
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Radiation Hardened Triple 3-Input NOR Gate
Intersil
Radiation Hardened Triple 3-Input NAND Gate
Intersil
Radiation Hardened Triple Three-Input NAND Gate
Intersil
Radiation Hardened Triple Three-Input NAND Gate
Intersil
Radiation Hardened Quad 2-Input AND Gate
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