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AD401M161RBA-5 Datasheet - ETC

Part Name
Description
MFG CO.
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Description
The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).

Features
• Single 3.3V(±10%) only power supply
• High speed tRAC acess time: 50/60ns
• Low power dissipation
   - Active mode : 432/396 mW (Mas)
   - Standby mode: 0.54 mW (Mas)
• Extended - data - out(EDO) page mode access
• I/O level: CMOS level (Vcc = 3.3V)
• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)
• 4 refresh modesh:
   - RAS only refresh
   - CAS - before - RAS refresh
   - Hidden refresh
   - Self-refresh(S-version)

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Part Name
Description
PDF
MFG CO.
4Mx4 CMOS DRAM (EDO) Family
Alliance Semiconductor
4Mx4 16Mb DRAM WITH FAST PAGE MODE
Integrated Silicon Solution
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
MITSUBISHI ELECTRIC
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
Siemens AG
3.3V 16M × 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Siemens AG
3.3V 1M × 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Siemens AG
3.3V 2M × 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Siemens AG
3.3V 4M × 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
Siemens AG
3.3V 8M × 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Siemens AG
3.3V 8M × 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
Infineon Technologies

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