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Home >>> SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. >>> AO4407 Datasheet

AO4407 Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AO4407 Datasheet PDF SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part Name
AO4407

Other PDF
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PDF
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page
7 Pages

File Size
1.4 MB

MFG CO.
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. GO URL

Description:
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=-30V,ID=-15A,RDS(ON)<11mΩ @VGS=-20V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.


Part Name
Description
PDF
MFG CO.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified

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