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N04Q1625C2BW-15I Datasheet - NANOAMP

Part Name
Description
MFG CO.
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Overview
The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power.

Features
• Multiple Power Supply Ranges
    1.1V - 1.3V
    1.65V - 1.95V
    2.3V - 2.7V
    2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
    1.2V Vcc with 3V VccQ
    1.8V Vcc with 3V VccQ
    2.5V Vcc with 3V VccQ
• Very low standby current
    50nA typical for 1.2V operation
• Very low operating current
    400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
    80µA typical for 1.2V operation at 1µs
• Simple memory control
    Dual Chip Enables (CE1 and CE2)
    Byte control for independent byte operation
    Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant

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Part Name
Description
PDF
MFG CO.
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16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
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