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NE72118-T2 Datasheet - NEC

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Description
MFG CO.
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DESCRIPTION
The NE72118 is a high performance gallium arsenide metal semiconductor field effect transistor (MESFET), housed in a low cost plastic surface mount package (SOT 23 style). This devices low phase noise and high fT make it an excellent choice for oscillator applications on a digital LNB (Low Noise Block).
NECs stringent quality assurance and test procedures ensure the highest reliability performance.

FEATURES
• HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz
• GATE LENGTH: Lg = 0.8 µm (recessed gate)
• GATE WIDTH: Wg = 330 µm
• 4 PINS SUPER MINI MOLD
• TAPE & REEL PACKAGING

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