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SST29EE020 Datasheet - SST

Part Name
Description
MFG CO.
SST29EE020
SST
Silicon Storage Technology SST
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PRODUCT DESCRIPTION
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE020 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE/LE/VE020 conform to JEDEC standard pinouts for byte-wide memories.
   
FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for SST29EE020
    – 3.0-3.6V for SST29LE020
    – 2.7-3.6V for SST29VE020
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and
        10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
    – 128 Bytes per Page, 2048 Pages
    – Page-Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 10 sec (typical)
    – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 120 and 150 ns
    – 3.0-3.6V operation: 200 and 250 ns
    – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
    Software Operation
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32-lead PLCC
    – 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
    – 32-pin PDIP
   

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