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STP6NA60 Datasheet

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MFG CO.
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This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance.

STP6NA60

 

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Part Name
Description
PDF
MFG CO.
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
New Jersey Semiconductor
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
New Jersey Semiconductor
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Unspecified
N-Channel Enhancement Mode Power MOS Transistor
Unspecified
N-Channel Enhancement Mode Power MOS Transistor
Signal Processing Technologies
N-Channel Enhancement-Mode Power MOS Field-Effect Transistor
New Jersey Semiconductor
N-CHANNEL ENHANCEMENT-MODE Power MOS Field-Effect Transistor
New Jersey Semiconductor
N-channel enhancement mode MOS transistor
Philips Electronics
N-channel enhancement mode MOS transistor
Philips Electronics
N-channel enhancement mode MOS transistor
Philips Electronics

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