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U6264AS1A07 Datasheet - ZMD

Part Name
Description
MFG CO.
U6264AS1A07
ZMD
Zentrum Mikroelektronik Dresden AG ZMD
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Description
The U6264ASA07 is a static RAM manufactured using a CMOS process technology with the following operating modes:
    - Read - Standby
    - Write - Data Retention
The memory array is based on a 6-transistor cell.
   
Features
❐ 8192 x 8 bit static CMOS RAM
❐ 70 ns Access Time
❐ Common data inputs and outputs
❐ Three-state outputs
❐ Typ. operating supply current:
    30 mA
❐ TTL/CMOS-compatible
❐ Automatic reduction of power
    dissipation in long Read or Write
    cycles
❐ Power supply voltage 5 V
❐ Operating temperature ranges
    -40 to 125 °C
❐ Quality assessment according to
    CECC 90000, CECC 90100 and
    CECC 90111
❐ ESD protection > 2000 V
    (MIL STD 883C M3015.7)
❐ Latch-up immunity > 100 mA
❐ Packages: SOP28 (300 mil)
                      SOP28 (330 mil)
   

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Part Name
Description
PDF
MFG CO.
Automotive Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Automotive Fast 8K x 8 SRAM
Unspecified
Automotive Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
Automotive Fast 8K x 24 SRAM
Zentrum Mikroelektronik Dresden AG
Fast 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
8K X 8 CMOS SRAM
ROHM Semiconductor
Standard 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
8K X 8-Bit CMOS SRAM
Hyundai Micro Electronics
Low Voltage 8K x 8 SRAM
Zentrum Mikroelektronik Dresden AG
CMOS 8K x 8-Bit SRAM
Holtek Semiconductor

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