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Part Name(s) : TLOH1102 TLRH1102 TLSH1102 TLYH1102
Description : Toshiba TLxH1102 SMT LEDs
Toshiba
Toshiba

Features
3.2 (L) x 2.8 (W) x 3.4 (H) mm Size
2.8 mm Diameter Lens−Top Type
InGaAlP Technology (Ultra High Brightness)
Low Drive Current
High Intensity Light Emission
Clear Luminescence is obtained
High Operating Temperture
Standard Embossed Taping 8 mm Pitch : T10 (500 pcs/reel)
Reflow Soldering is possible

 

Applications
Automotive Use
Message Signboard
Backlight

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Part Name(s) : AON7400A
Description : 30V N-Channel MOSFET
AOSMD
Alpha and Omega Semiconductor

General Description
The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications.

Product Summary
VDS                                      
30V
ID (at VGS=10V)                       40A
RDS(ON) (at VGS=10V)               < 7.5mΩ
RDS(ON) (at VGS = 4.5V)            < 10.5mΩ
100% UIS Tested
100% Rg Tested


 

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Part Name(s) : MCC162 MCC162-08IO1 MCC162-12IO1 MCC162-14IO1 MCC162-16IO1 MCC162-18IO1 MCD162 MCD162-08IO1 MCD162-12IO1 MCD162-14IO1 MCD162-16IO1 MCD162-18IO1
Description : Thyristor Modules , Thyristor/Diode Modules
IXYS
IXYS CORPORATION

Features
● International standard package
● Direct copper bonded Al2O3 -ceramic base plate
● Planar passivated chips
● Isolation voltage 3600 V~
● UL registered, E 72873
● Keyed gate/cathode twin pins

 

Applications
● Motor control
● Power converter
● Heat and temperature control for industrial furnaces and chemical processes
● Lighting control
● Contactless switches

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Part Name(s) : BLW96
Description : HF/VHF power transistor
Philips
Philips Electronics

DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance
stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.
The transistor has a 12" flange envelope with a ceramic cap. All leads are isolated from the flange.

 

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Part Name(s) : GA50TS120U
Description : HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast™ Speed IGBT
IR
International Rectifier

VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 50A

 

Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology

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Part Name(s) : D1NB80-1 STD1NB80- STD1NB80-1
Description : N-CHANNEL 800V - 16Ω - 1A - IPAK PowerMESH™ MOSFET
ST-Microelectronics
STMicroelectronics

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.


■ TYPICAL RDS(on) = 16 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT

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Part Name(s) : 2N7002K 2N7002KG 2N7002KG-AE2-R 2N7002KL-AE2-R
Description : 300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET
UTC
Unisonic Technologies

DESCRIPTION
The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM applications.

„ FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

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Part Name(s) : IS1U20
Description : OPIC Light Detector for Infrared Communication (IrDA1.0 Compatible)
Sharp
Sharp Electronics

Features
1. IrDA1.0 compatible OPIC light detector
   (Transmission rate : 2.4 to 115.2kbps)
2. Compact design due to OPIC (Number of parts : 1)
3. Compatible with both 5V and 3V power supplies
   (Operating supply voltage : 2.7 to 5.5V)
4. Visible light cut-off type
5. Recommended use in combination emitter ( GL1F20)


Applications
1. Personal computers
2. Portable information terminal equipment
3. Printers
4. Word processors

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Part Name(s) : SSL12 SSL13 SSL14
Description : 1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers
LUGUANG
Shenzhen Luguang Electronic Technology Co., Ltd

Features
For surface mounted application
Metal silicon junction, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carries Underwriters Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering: 260°C / 10 seconds at terminals

 

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Part Name(s) : F1210
Description : PATENTED GOLD METALIZED 10Watts Single Ended SILICON GATE NHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet-RF
Polyfet RF Devices

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"
TM process features  gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
 

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