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Formosa
Formosa Technology
Description : PNP EPITAXIAL PLANAR TRANSISTOR

600mA General Purpose PNP EPITAXIAL PLANAR TRANSISTOR

Features
• High collector-emitterbreakdien voltage.
   (BVCEO = -60V@IC=-10mA)
PNP silicon EPITAXIAL PLANAR TRANSISTOR, is designed for general
   purpose and amplifier applications.
• As complementary type, the NPN TRANSISTOR FMBT2222/
   FMBT2222A is recommended.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2907-H.

Description : Low-Noise Matched TRANSISTOR Array ICs

Description
The THAT 300, 320 and 340 are large geometry, 4-TRANSISTOR, monolithic NPN and/or PNP arrays. They exhibit both high speed and low noise, with excellent parameter matching between TRANSISTORs of the same gender. Typical base-spreading resistance is 25 Ω for the PNP devices (30 Ω for the low-gain NPNs), so their resulting voltage noise is under 1 nV/√Hz. This makes the 300 series ideally suited for low-noise amplifier input stages, log amplifiers, and many other applications. The four-NPN TRANSISTOR array is available in versions selected for hfe with minimums of 150 (300A) or 300 (300B).

FEATURES
• 4 Matched NPN TRANSISTORs
    º 300 typical hfe of 100
    º 300A minimum hfe of 150
    º 300B minimum hfe of 300
• 4 Matched PNP TRANSISTORs
    º 320 typical hfe of 75
• 2 Matched PNP and 2 Matched NPN TRANSISTORs
    º 340 PNP typical hfe of 75
    º 340 NPN typical hfe of 100
• Low Voltage Noise
    º 0.75 nV/ √Hz (PNP)
    º 0.8 nV/ √Hz (NPN)
• High Speed
    º fT = 350 MHz (NPN)
    º fT = 325 MHz (PNP)
• 500 μV matching between devices
• Dielectrically Isolated for low crosstalk and high DC isolation
• 36V VCEO

APPLICATIONS
• Low Noise Front Ends
• Microphone Preamplifiers
• Log/Antilog Amplifiers
• Current Sources
• Current Mirrors
• Multipliers

Formosa
Formosa Technology
Description : Dual PNP EPITAXIAL PLANAR TRANSISTOR

200mA Silicon PNP EPITAXIAL PLANAR TRANSISTOR

Features
• High collector-emitterbreakdien voltage. (BVCEO = -40V@IC=-1.0mA)
• Small load switch TRANSISTOR with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• Offer PNP+ PNP in one package recommended
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3906DW1-H

Semelab
Semelab - > TT Electronics plc
Description : PNP SILICON PLANAR EPITAXIAL TRANSISTORS

FEATURES

• SILICON PLANAR EPITAXIAL PNP TRANSISTOR





APPLICATIONS:

These PNP silicon PLANAR EPITAXIAL trasistors are designed for digital and analog applications at current levels up 0.5 amps.


Semelab
Semelab - > TT Electronics plc
Description : SILICON PLANAR EPITAXIAL PNP TRANSISTOR

PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

FEATURES
• Silicon PLANAR PNP TRANSISTOR
• Hermetic Ceramic Surface Mount Package
• CECC Screening Options
• Space quality Options

Part Name(s) : 2N5415CSM4 2N5416CSM4
TTELEC
TT Electronics.
Description : SILICON PLANAR EPITAXIAL PNP TRANSISTOR

SILICON PLANAR EPITAXIAL PNP TRANSISTOR

• Silicon PLANAR PNP TRANSISTOR
• Hermetic Ceramic Surface Mounted Package.
• Hi-Rel Screening Options Available

Part Name(s) : 8F01 TPCP8F01
Toshiba
Toshiba
Description : TOSHIBA Multi-chip Device Silicon PNP EPITAXIAL TRANSISTOR, Field Effect TRANSISTOR Silicon N Cannel MOS Type

○ Swtching Applications

○ Load Switch Applications

○ Multi-chip discrete device; built-in PNP TRANSISTOR for main switch and N-ch MOS FET for drive



• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)

                                                       (PNP TRANSISTOR)

• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)

                                                       (PNP TRANSISTOR)

• High-speed switching: tf = 40 ns (typ.) (PNP TRANSISTOR)



 


Micro-Electronics
Micro Electronics
Description : PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS.

Part Name(s) : PN3644 PN3645
Micro-Electronics
Micro Electronics
Description : PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PN3644, PN3645 (PNP) are silicon PLANAR EPITAXIAL TRANSISTORs designed for small signal general purpose amplifiers and switches.

Micro-Electronics
Micro Electronics
Description : PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

MPS6516 thru MPS6519 are PNP siliocn PLANAR EPITAXIAL TRANSISTORs designed for general purpose amplifier applications and for complementary circuitry.

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