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Part Name(s) : QED233 QED234
QT Optoelectronics => Fairchildsemi
QT Optoelectronics => Fairchildsemi
Description : GaAs INFRARED EMITTING DIODE

GaAs INFRARED EMITTING DIODE

Part Name(s) : LN61C LN65 LN62S
Panasonic Corporation
Panasonic Corporation
Description : GaAs INFRARED Light EMITTING DIODE

GaAs INFRARED Light EMITTING DIODE

For Optical Control Systems

Part Name(s) : MCS21 MCS2401
GE Solid State
GE Solid State
Description : PHOTON COUPLED ISOLATOR

GaAs INFRARED EMITTING DIODE & Light Activated SCR

The GE Solid State MCS21 and MCS2401 consist of a gallium arsenide, INFRARED EMITTING DIODE coupled with a light activated silicon controlled rectifier in a dual-in-line package. These devices are also available in Surface-Mount packaging.

Siemens AG
Siemens AG
Description : INFRARED EMITTER

DESCRIPTION
The SFH 431 is a GaAs INFRARED EMITTING DIODE which emits radiation in the near INFRARED range. The emitted radiation, whcih can be modulated, is caused by current in the forward direction. The SFH 43 comes in a 3-leaded TO-13 package and has a glass lens to provide a narrow EMITTING beam.

Part Name(s) : MIE-534A4
Unity Opto Technology
Unity Opto Technology
Description : AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE



Description

The MIE-534A4 is an INFRARED EMITTING DIODE utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.



Features

 High radiant power and high radiant intensity

 Suitable for DC and high pulse current operation

 Standard T-1 3/4 ( f 5mm ) package, radiant angle : 30°

 Peak wavelength lp = 940 nm

 Good spectral matching to si-photodetector


Part Name(s) : MT5330
Marktech Optoelectronics
Marktech Optoelectronics
Description : TRANSISTOR COUPLER

GaAs INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR

The MT5350 consists of a gallium arsenide INFRARED EMITTING DIODE coupled with a silicon photo transistor in a dual in-line package

APPLICATIONS
• AC LINE/DIGITAL LOGIC ISOLATOR
• DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR
• TELEPHONE LIEN RECEIVER
• TWISTED PAIR LINE RECEIVER
• HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL
• RELAY CONTACT MONITOR

Honeywell International
Honeywell International
Description : GaAs INFRARED EMITTING DIODE

DESCRIPTION
The SEP8506 is a gallium arsenide INFRARED EMITTING DIODE molded in a side-EMITTING red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

FEATURES
• Side-EMITTING plastic package
• 50¡ (nominal) beam angle
• 935 nm wavelength
• Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
·

Part Name(s) : LED55BF LED55CF LED56F
Fairchild Semiconductor
Fairchild Semiconductor
Description : GaAs INFRARED EMITTING DIODE

DESCRIPTION
The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.

FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level

Part Name(s) : KELD001
Kodenshi Auk Co., LTD
Kodenshi Auk Co., LTD
Description : INFRARED EMITTING DIODE(GaAs)

Description
The KELD001, high-power GaAs IRED mounted in a 2nd Mold package, is compact, and easy to mount. 

Features
- Compact
- Side-looking with plastic package
- RoHS Compliance
- Small 2nd Mold Package

Application
- Encoders
- Mouses
- OA machines
- Photointerrupter

Part Name(s) : LN162S
Panasonic Corporation
Panasonic Corporation
Description : GaAs INFRARED Light EMITTING DIODE

GaAs INFRARED Light EMITTING DIODE

For optical control systems

Features
● High-power output, high-efficiency : PO = 3.5 mW (typ.)
INFRARED light emission close to monochromatic light :
   λP = 950 nm (typ.)
● Small ceramic package

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