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Vishay Semiconductors
Vishay Semiconductors
Description : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 Package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.

Features
SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard Package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers

Part Name(s) : TSMS3700
Vitesse Semiconductor
Vitesse Semiconductor
Description : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 Package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.
   
Features
SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard Package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor
   
Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers
   

Part Name(s) : TSML3700
Vishay Semiconductors
Vishay Semiconductors
Description : GaAs/GaAlAs Infrared Emitting Diode in SMT Package

Description
TSML3700 is an Infrared Emitting Diode in GaAlAs on GaAs technology in a miniature PL–CC–2 SMD Package.
It has been designed to meet the increasing demand on optoelectronic devices for surface mounting.
The Package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the Package is filled up with clear epoxy.
This new Package achieves an improvement of 100% in radiant intensity, compared with the old SOT–23 Package.

Features
SMT IRED with extra high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard Package
● Suitable for Infrared, vapor phase and wave-solder process
● Available in 8 mm tape
● Suitable for pulse current operation
● Extra wide angle of half intensity ϕ = ± 60
● Peak wavelength p = 925 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    High performance PCB mounted Infrared sensors
    High power Infrared emitter for miniature light barriers

Part Name(s) : MCS21 MCS2401
GE Solid State
GE Solid State
Description : PHOTON COUPLED ISOLATOR

GaAs Infrared Emitting Diode & Light Activated SCR

The GE Solid State MCS21 and MCS2401 consist of a gallium arsenide, Infrared Emitting Diode coupled with a light activated silicon controlled rectifier in a dual-in-line Package. These devices are also available in Surface-Mount packaging.

Part Name(s) : SFH4211 Q62702-P1825
OSRAM GmbH
OSRAM GmbH
Description : GaAs Infrared Emitter in SMT Package

Features
• Very highly efficient GaAs-LED
• Good Linearity (Ie = f [IF]) at high currents
• DC (with modulation) or pulsed operations are possible
• High reliability
• High pulse handling capability
• Suitable for surface mounting (SMT)
• Available on tape and reel
• SFH 4211 same Package as SFH 320

Applications
• Miniature photointerrupters
• Industrial electronics
• For drive and control circuits
• Automotive technology
• Sensor technology
• Alarm and safety equipment
• IR free air transmission

Part Name(s) : QED233 QED234
QT Optoelectronics => Fairchildsemi
QT Optoelectronics => Fairchildsemi
Description : GaAs Infrared Emitting Diode

GaAs Infrared Emitting Diode

Infineon Technologies
Infineon Technologies
Description : GaAs Infrared Emitter in SMT Package

Features
● Very highly efficient GaAs-LED
● Good Linearity (Ie = f [IF]) at high currents
● DC (with modulation) or pulsed operations
   are possible
● High reliability
● High pulse handling capability
● Suitable for surface mounting (SMT)
● Available on tape and reel
● SFH 420 same Package as SFH 320/421
   SFH 425 same Package as SFH 325/426
● SFH 425: Suitable only for IR-reflow
   soldering. In case of dip soldering, please
   contact us first.

Applications
● Miniature photointerrupters
● Industrial electronics
● For drive and control circuits

Siemens AG
Siemens AG
Description : Infrared EMITTER

DESCRIPTION
The SFH 431 is a GaAs Infrared Emitting Diode which emits radiation in the near Infrared range. The emitted radiation, whcih can be modulated, is caused by current in the forward direction. The SFH 43 comes in a 3-leaded TO-13 Package and has a glass lens to provide a narrow Emitting beam.

Part Name(s) : MIE-534A4
Unity Opto Technology
Unity Opto Technology
Description : AlGaAs/GaAs HIGH POWER T-1 3/4 Package Infrared Emitting Diode

AlGaAs/GaAs HIGH POWER T-1 3/4 Package Infrared Emitting Diode



Description

The MIE-534A4 is an Infrared Emitting Diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic Package.



Features

 High radiant power and high radiant intensity

 Suitable for DC and high pulse current operation

 Standard T-1 3/4 ( f 5mm ) Package, radiant angle : 30°

 Peak wavelength lp = 940 nm

 Good spectral matching to si-photodetector


Part Name(s) : MT5330
Marktech Optoelectronics
Marktech Optoelectronics
Description : TRANSISTOR COUPLER

GaAs Infrared Emitting Diode & NPN SILICON PHOTO TRANSISTOR

The MT5350 consists of a gallium arsenide Infrared Emitting Diode coupled with a silicon photo transistor in a dual in-line Package

APPLICATIONS
• AC LINE/DIGITAL LOGIC ISOLATOR
• DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR
• TELEPHONE LIEN RECEIVER
• TWISTED PAIR LINE RECEIVER
• HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL
• RELAY CONTACT MONITOR

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