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Vishay
Vishay Semiconductors
Description : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.

Features
● SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers

Part Name(s) : TSMS3700
Vitesse
Vitesse Semiconductor
Description : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.
   
Features
● SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor
   
Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers
   

Part Name(s) : TSML3700
Vishay
Vishay Semiconductors
Description : GaAs/GaAlAs Infrared Emitting Diode in SMT Package

Description
TSML3700 is an Infrared Emitting Diode in GaAlAs on GaAs technology in a miniature PL–CC–2 SMD package.
It has been designed to meet the increasing demand on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy.
This new package achieves an improvement of 100% in radiant intensity, compared with the old SOT–23 package.

Features
● SMT IRED with extra high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wave-solder process
● Available in 8 mm tape
● Suitable for pulse current operation
● Extra wide angle of half intensity ϕ = ± 60
● Peak wavelength p = 925 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    High performance PCB mounted Infrared sensors
    High power Infrared emitter for miniature light barriers

Part Name(s) : TSMF3700
Vishay
Vishay Semiconductors
Description : High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description
TSMF3700 is a high speed Infrared Emitting Diode in GaAlAs on GaAlAs double hetero (DH) technology in a miniature PL-CC-2 SMD package.
It has been designed to meet the increasing demand on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy.

Features
• SMT IRED with extra high radiant power
• Low forward voltage
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Suitable for Infrared, vapor phase and wavesolder process
• Available in 8 mm tape
• Suitable for pulse current operation
• Extra wide angle of half intensity ϕ = ± 60°
• Peak wavelength λp = 870 nm
• High reliability
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    High performance PCB mounted Infrared sensors
    High power Infrared emitter for miniature light barriers

Part Name(s) : SEP8506-003
HONEYWELL-ACC
Honeywell Accelerometers
Description : SEP Series GaAs Infrared Emitting Diode, Side-Emitting Plastic Package

Description
The SEP8506 is a gallium arsenide Infrared Emitting Diode molded in a side-Emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

Features
● Side-Emitting plastic package
● 50 ° (nominal) beam angle
● 935 nm wavelength
● Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Part Name(s) : SEP8506-001
HONEYWELL-ACC
Honeywell Accelerometers
Description : SEP Series GaAs Infrared Emitting Diode, Side-Emitting Plastic Package

Description
The SEP8506 is a gallium arsenide Infrared Emitting Diode molded in a side-Emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

Features
● Side-Emitting plastic package
● 50 ° (nominal) beam angle
● 935 nm wavelength
● Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Vishay
Vishay Semiconductors
Description : High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package

Description
TSAL7600 is a high efficiency Infrared Emitting Diode in GaAlAs on GaAs technology, molded in clear plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
● Extra high radiant power and radiant intensity
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1¾ (ø 5 mm) package
● Angle of half intensity ϕ = ± 30°
● Peak wavelength λp = 940 nm
● Good spectral matching to Si photodetectors

Applications
    Infrared remote control units with high power requirements
    Free air transmission systems
    Infrared source for optical counters and card readers
    IR source for smoke detectors

Part Name(s) : TOIM3000 TOIM3232
Temic
Temic Semiconductors
Description : Infrared IrDA Integrated Interface Circuits

Description
The TOIM3xxx series ICs provide proper timing for the front end Infrared transceiver TFDS3000, as specified by the IrDA standard. In the transmit mode, the TOIM3xxx provides IrDA-compatible electrical pulses to the Infrared transceiver TFDS3000 on logic LOW electrical input. In the receive mode, the TOIM3xxx stretches received Infrared pulses to the proper bit width at the operating bit rate. The IrDA bit rate varies from 2.4 to 115.2 kbit/s.

Features
TOIM3000
● Pulse shaping function (shortening and stretching) used in Infrared IrDA standard applications
● Directly interfaces the Infrared transceiver TFDS3000*) to a UART or a microcontroller
● 3 V and 5 V operation with low operating current
● SO16L package

TOIM3232
● Pulse shaping function (shortening and stretching) used in Infrared IrDA standard applications
● Directly interfaces the Infrared transceiver TFDS3000*) to an RS232 port
● Programmable baud clock generator (1200 Hz ∼ 115 kHz), 13 baud rates
● 3 V and 5 V operation
● SO16L package

Description : GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

DESCRIPTION
The TSHA440. series are Infrared, 875 nm Emitting Diodes in GaAlAs technology, molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 20°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass

Part Name(s) : MIE-534A4
Unity
Unity Opto Technology
Description : AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE Infrared Emitting Diode

AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE Infrared Emitting Diode



Description

The MIE-534A4 is an Infrared Emitting Diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.



Features

 High radiant power and high radiant intensity

 Suitable for DC and high pulse current operation

 Standard T-1 3/4 ( f 5mm ) package, radiant angle : 30°

 Peak wavelength lp = 940 nm

 Good spectral matching to si-photodetector


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