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Description : LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437

LOW REVERSE LEAKAGE CHARACTERISTICS

LOW NOISE CHARACTERISTICS

• DOUBLE PLUG CONSTRUCTION

• METALLURGICALLYBONDED


Description : LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437
LOW REVERSE LEAKAGE CHARACTERISTICS
LOW NOISE CHARACTERISTICS
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLYBONDED

Part Name(s) : OM4201ST
SENSITRON
Sensitron
Description : SILICON SCHOTTKY RECTIFIER- Common Cathode Ultra LOW REVERSE LEAKAGE 175°C Operating Temperature

Features:

• Ultra LOW REVERSE LEAKAGE Current

• Soft REVERSE Recovery at LOW and High Temperature

• Very LOW Forward Voltage Drop

LOW Power Loss, High Efficiency

• High Surge Capacity

• Guard Ring for Enhanced Durability and Long Term Reliability

• Guaranteed REVERSE Avalanche CHARACTERISTICS



Applications:

• Switching Power Supply

• Converters

• Free-Wheeling Diodes

• Polarity Protection Diode



 


Part Name(s) : ID101 ID101_TO-71
MICROSS
Micross Components
Description : LOW LEAKAGE PICO-AMP DUAL DIODE

The ID101 is a LOW LEAKAGE Monolithic Dual Pico-Amp Diode
Linear Systems replaces discontinued Intersil ID101

The ID101 LOW-LEAKAGE monolithic dual diode provides a superior alternative to conventional diode technology when REVERSE current (LEAKAGE) must be minimized. In addition the monolithic dual construction alLOWs excellent capacitance matching per diode. The ID101 features a LEAKAGE current of 0.1 pA and is well suited for use in applications such as input protection for operational amplifiers.

FEATURES
    DIRECT REPLACEMENT FOR INTERSIL ID101
    REVERSE LEAKAGE CURRENT       IR = 0.1pA
    REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V
    REVERSE CAPACITANCE                 Crss = 0.75pF

ID101 Benefits:
◾ Negligible Circuit LEAKAGE Contribution
◾ Circuit “Transparent” Except to Shunt High-Frequency Spikes
◾ Simplicity of Operation

ID101 Applications:
◾ Op Amp Input Protection
◾ Multiplexer Overvoltage Protection

MICROSS
Micross Components
Description : LOW LEAKAGE PICO-AMP DUAL DIODE

The SSTDPAD100 is a LOW LEAKAGE Monolithic Dual Pico-Amp Diode

The SSTDPAD100 LOW-LEAKAGE monolithic dual diode provides a superior alternative to conventional diode technology when REVERSE current (LEAKAGE) must be minimized. In addition the monolithic dual construction alLOWs excellent capacitance matching per diode. The SSTDPAD100 features a LEAKAGE current of -100 pA and is well suited for use in applications such as input protection for operational amplifiers.

FEATURES
   DIRECT REPLACEMENT FOR SILICONIX SSTDPAD100
   HIGH ON ISOLATION 20fA
   EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.5pF
   ULTRALOW LEAKAGE ≤ 100 pA
   REVERSE BREAKDOWN VOLTAGE BVR ≥ ‐30V
   REVERSE CAPACITANCE Crss ≤ 4.0pF

SSTDPAD100 Benefits:
◾ Negligible Circuit LEAKAGE Contribution
◾ Circuit “Transparent” Except to Shunt High-Frequency Spikes
◾ Simplicity of Operation

SSTDPAD100 Applications:
◾ Op Amp Input Protection
◾ Multiplexer Overvoltage Protection

Part Name(s) : SSTDPAD5 SSTDPAD5_SOIC
MICROSS
Micross Components
Description : LOW LEAKAGE PICO-AMP DUAL DIODE

The SSTDPAD5 is a LOW LEAKAGE Monolithic Dual Pico-Amp Diode

The SSTDPAD5 extremely LOW-LEAKAGE monolithic dual diode provides a superior alternative to conventional diode technology when REVERSE current (LEAKAGE) must be minimized. In addition the monolithic dual construction alLOWs excellent capacitance matching per diode. The SSTDPAD5 features a LEAKAGE current of -5 pA and is well suited for use in applications such as input protection for operational amplifiers.

FEATURES
   DIRECT REPLACEMENT FOR SILICONIX SSTDPAD5
   HIGH ON ISOLATION 20fA
   EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.5pF
   ULTRALOW LEAKAGE ≤ 5 pA
   REVERSE BREAKDOWN VOLTAGE BVR ≥ ‐30V
   REVERSE CAPACITANCE Crss ≤ 4.0pF

SSTDPAD5 Benefits:
◾ Negligible Circuit LEAKAGE Contribution
◾ Circuit “Transparent” Except to Shunt High-Frequency Spikes
◾ Simplicity of Operation

SSTDPAD5 Applications:
◾ Op Amp Input Protection
◾ Multiplexer Overvoltage Protection

Part Name(s) : PAD20_TO-72 PAD20
MICROSS
Micross Components
Description : LOW LEAKAGE PICO-AMP DIODE

Linear Systems replaces discontinued Siliconix PAD20
The PAD20 is a LOW LEAKAGE Pico-Amp Diode packaged in hermetic TO-72

The PAD20 extremely LOW-LEAKAGE diode provides a superior alternative to conventional diode technology when REVERSE current (LEAKAGE) must be minimized. The PAD20 features a LEAKAGE current of -20 pA and is well suited for use in applications such as input protection for operational amplifiers.

FEATURES
    DIRECT REPLACEMENT FOR SILICONIX PAD20
    REVERSE BREAKDOWN VOLTAGE BVR ≥ ‐45V
    ULTRALOW LEAKAGE ≤ 20 pA
    REVERSE CAPACITANCE Crss ≤ 2.0pF

PAD20 Benefits:
◾ Negligible Circuit LEAKAGE Contribution
◾ Circuit “Transparent” Except to Shunt High-Frequency Spikes
◾ Simplicity of Operation

PAD20 Applications:
◾ Op Amp Input Protection
◾ Multiplexer Overvoltage Protection

Part Name(s) : DPAD1
MICROSS
Micross Components
Description : LOW LEAKAGE PICO-AMP DUAL DIODE

The DPAD1 is a LOW LEAKAGE Monolithic Dual Pico-Amp Diode
Linear Systems replaces discontinued Siliconix DPAD1

The DPAD1 extremely LOW-LEAKAGE monolithic dual diode provides a superior alternative to conventional diode technology when REVERSE current (LEAKAGE) must be minimized. In addition the monolithic dual construction alLOWs excellent capacitance matching per diode. The DPAD1 features a LEAKAGE current of -1 pA and is well suited for use in applications such as input protection for operational amplifiers.

FEATURES
   DIRECT REPLACEMENT FOR SILICONIX DPAD1
   HIGH ON ISOLATION 20fA
   EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.2pF
   ULTRALOW LEAKAGE ≤ 1 pA
   REVERSE BREAKDOWN VOLTAGE BVR ≥ -45V
   REVERSE CAPACITANCE Crss ≤ 0.8pF
  
DPAD1 Benefits:
■ Negligible Circuit LEAKAGE Contribution
■ Circuit “Transparent” Except to Shunt
   High-Frequency Spikes
■ Simplicity of Operation

DPAD1 Applications:
■ Op Amp Input Protection
■ Multiplexer Overvoltage Protection

Part Name(s) : DPAD50 DPAD50_TO-72
MICROSS
Micross Components
Description : LOW LEAKAGE PICO-AMP DUAL DIODE

The DPAD50 is a LOW LEAKAGE Monolithic Dual Pico-Amp Diode
Linear Systems replaces discontinued Siliconix DPAD50

The DPAD50 extremely LOW-LEAKAGE monolithic dual diode provides a superior alternative to conventional diode technology when REVERSE current (LEAKAGE) must be minimized. In addition the monolithic dual construction alLOWs excellent capacitance matching per diode. The DPAD50 features a LEAKAGE current of -50 pA and is well suited for use in applications such as input protection for operational amplifiers.

FEATURES
    DIRECT REPLACEMENT FOR SILICONIX DPAD50
    HIGH ON ISOLATION 20fA
    EXCELLENT CAPACITANCE MATCHING ∆CR ≤ 0.5pF
    ULTRALOW LEAKAGE ≤ 50 pA
    REVERSE BREAKDOWN VOLTAGE BVR ≥ -­‐45V
    REVERSE CAPACITANCE Crss ≤ 2.0pF

DPAD50 Benefits:
◾ Negligible Circuit LEAKAGE Contribution
◾ Circuit “Transparent” Except to Shunt High-Frequency Spikes
◾ Simplicity of Operation

DPAD50 Applications:
◾ Op Amp Input Protection
◾ Multiplexer Overvoltage Protection

Description : LOW REVERSE LEAKAGE SCHOTTKY DIODE

LOW REVERSE LEAKAGE SCHOTTKY DIODE

100 Volts 25 Amps



Features

•  Tungsten schottky barrier

•  Oxide passivated structure

•  Guard ring protection for increased REVERSE energy capability

•  Epitaxial structure minimizes forward voltage drop

•  Hermetically sealed, LOW profile ceramic surface mount power package

•  LOW package inductance

•  Very LOW thermal resistance

•  Available as standard polarity (strap is anode: 1N6817) and REVERSE polarity (strap is cathode: 1N6817R)

•  TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS) screening i.a.w. Microsemi internal procedure PS11.50 available


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