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Part Name(s) : SMPP MA4PHXXX
MACOM
Tyco Electronics
Description : Surface Mount Plastic PIN DIODES

Description
M/A-COM offers six unique PIN DIODES in five industry standard, LOW cost, surface mount plastic packages. Within this series, the PIN DIODES offered, feature a variety of LOW resistance, LOW capacitance and long minority carrier lifetime characteristics.
The MA4P275 has the LOWest series resistance for Series Insertion Loss and Shunt Isolation switches. The MA4P789 has the LOWest capacitance and offers the highest isolation in Series and Series-Shunt switches through 3 GHz. The MA4P277 and MA4P278 PIN DIODES have longer intrinsic layers to produce better distortion performance in attenuators. The MA4P282 and MA4P274 are general purpose PIN DIODES useful in either switches or attenuators. These parts are available as single DIODES, series pairs ( ST ) , reverse series pairs ( STR ) , common cathode pairs ( CK ) , common anode pairs ( CA ) , and unconnected pairs in the featured packages.
The SMPP series of PIN DIODES is available in the SOT-23 (case style 287), the SOT-143 (case style 1068), the SOT-323 (case style 1146) , the SOD-323 (case style 1141) , and the SC-79 (case style 1279) packages. These packages are supplied on tape and reel for automatic pick and place assembly on surface mount circuit boards. The tape and reel suffix designation is a “T” at the end of the part number.

Features
■ Industry Standard Surface Mount Packages
LOW Capacitance DIODES
LOW Resistance DIODES
LOW Loss Switch DIODES
■ High Isolation Switch DIODES
LOW Distortion Attenuator DIODES
■ Fast Switching DIODES
■ Single and Dual Diode Configurations
■ Tape and Reel Packaging

Description : LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

LOW VOLTAGE AVALANCHE ZENER DIODES
HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

● Designed for use at LOW current levels.
● Features sharp knees, LOW leakage, LOW impedance, and LOW noise.
● Available in the DO-7 glass package and in die form.

1. Suffix denotes Vz tolerance: non suffix for ±20%, A suffix for ±10%.
2. Measures with 10%, 60 Hz AC superimposed on Izt.
3. Measured from 1000 to 3000 Hz.
4. Difference between Vz at Izt and IzL.
5. VF @ 200mA = 1.2V Max.
6. Power rating is 400 mW @ 25°C, derate linearly to zero @ 175°C
7. Package Style DO-7

Description : Surface Mount Plastic PIN DIODES

Description
M/A-COM offers six unique PIN DIODES in five industry standard, LOW cost, surface mount plastic packages. Within this series, the PIN DIODES offered, feature a variety of LOW resistance, LOW capacitance and long minority carrier lifetime characteristics.

Features
■ Industry Standard Surface Mount Packages
LOW Capacitance DIODES
LOW Resistance DIODES
LOW Loss Switch DIODES
■ High Isolation Switch DIODES
LOW Distortion Attenuator DIODES
■ Fast Switching DIODES
■ Single and Dual Diode Configurations
■ Tape and Reel Packaging

Diodes
Diodes Incorporated.
Description : NPN AVALANCHE TRANSISTOR IN SOT23

Description
The FMMT415/417 are NPN silicon planar bipolar transistors designed for operating in AVALANCHE mode. Tight process control and LOW inductance packaging combine to produce high-current pulses with fast edges.

Features
AVALANCHE Transistor
• 60A Peak AVALANCHE Current (Pulse width = 20ns)
• BVCES > 260V (415) & 320V (417)
• BVCEO > 100V
• Specifically designed for AVALANCHE mode operation
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

Applications
• Laser Diode Drivers for Ranging and Measurement (LIDAR)
• Radar Systems
• Fast Edge Switch Generator
• High Speed Pulse Generators

Diodes
Diodes Incorporated.
Description : SOT23 NPN silicon planar AVALANCHE transistor

Description
The FMMT413 is an NPN silicon planar bipolar transistor designed for operating in AVALANCHE mode. Tight process control and LOW inductance packaging combine to produce high current pulses with fast edges.

Features
AVALANCHE Transistor
• 50A Peak AVALANCHE Current (Pulse width = 20ns)
• BVCES > 150V
• BVCEO > 50V
• Specifically designed for AVALANCHE mode operation
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

Applications
• Laser Diode Drivers for Ranging and Measurement (LIDAR)
• Radar Systems
• Fast Edge Switch Generator
• High Speed Pulse Generators

Description : LOW VOLTAGE AVALANCHE ZENER DIODES

LOW VOLTAGE AVALANCHE ZENER DIODES
HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

1. Package Style DO-7
2. Suffix denotes Vz tolerance: non suffix ±20%, A suffix ±10%: Ir @ Vr1, Vz, + Vf only. Suffix B ±5%: Ir @ Vr2, Vz, DVz, Vf, ND.
3. Measured with 10%, 60 Hz AC superimposed on Izt.
4. Measured from 1000 to 3000 Hz.
5. Difference between Vz at Izt and IzL.
6. Forward VOLTAGE (Vf): If = 200mA, Ta = 25°C, Max = 1.1 Vdc.

MILITARY SCREENING AVAILABLE

Description : LOW VOLTAGE AVALANCHE ZENER DIODES

LOW VOLTAGE AVALANCHE ZENER DIODES

HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

1. Package Style DO-7
2. Suffix denotes Vz tolerance: non suffix ±20%, A suffix ±10%: Ir @ Vr1, Vz, + Vf only. Suffix B ±5%: Ir @ Vr2, Vz, DVz, Vf, ND.
3. Measured with 10%, 60 Hz AC superimposed on Izt.
4. Measured from 1000 to 3000 Hz.
5. Difference between Vz at Izt and IzL.
6. Forward VOLTAGE (Vf): If = 200mA, Ta = 25°C, Max = 1.1 Vdc.

MILITARY SCREENING AVAILABLE

Description : LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

· Designed for use at LOW current levels.

· Features sharp knees, LOW leakage, LOW impedance, and LOW noise.

· Available in the DO-7 glass package and in die form.


Part Name(s) : BAS29 BAS31 BAS35
Philips
Philips Electronics
Description : General purpose controlled AVALANCHE (double) DIODES

DESCRIPTION
General purpose switching DIODES fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two DIODES in series.
The BAS35 has two DIODES with a common anode.

FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse VOLTAGE:
   max. 90 V
• Repetitive peak reverse VOLTAGE:
   max. 110 V
• Repetitive peak forward current:
   max. 600 mA
• Repetitive peak reverse current:
   max. 600 mA.

APPLICATIONS
• General purpose switching in e.g.
   surface mounted circuits.

NXP
NXP Semiconductors.
Description : General purpose controlled AVALANCHE (double) DIODES

DESCRIPTION
General purpose switching DIODES fabricated in planar technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single diode. The BAS31 has two DIODES in series. The BAS35 has two DIODES with a common anode.

FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse VOLTAGE: max. 90 V
• Repetitive peak reverse VOLTAGE: max. 110 V
• Repetitive peak forward current: max. 600 mA
• Repetitive peak reverse current: max. 600 mA.

APPLICATIONS
• General purpose switching in e.g. surface mounted circuits.

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