MOSFET – Power,
P-Channel, Schottky Diode,
ChipFET, FETKY, Schottky Barrier Diode
-20 V, -4.4 A, 4.1 A

Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Trench P−Channel for Low On Resistance
• Ultra Low VF Schottky
• Pb−Free Packages are Available

Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products

Power MOSFET and Schottky Diode
−20 V, FETKY, P−Channel, −4.4 A, with
4.1 A Schottky Barrier Diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Trench P−Channel for Low On Resistance
• Ultra Low VF Schottky
• Pb−Free Packages are Available

Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products

Power MOSFET and Schottky Diode
-20 V, FETKY, P-Channel, -4.4 A, with
3.7 A Schottky Barrier Diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP-6 Package
• Leadless SMD Package Provides Great Thermal Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Trench P-Channel for Low On Resistance
• Ultra Low VF Schottky
• These are Pb-Free Devices

Applications
• Li-Ion Battery Charging
• High Side DC-DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products

Power MOSFET and Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
   Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available

Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products

Power MOSFET and Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Better Thermals
• Super Low Gate Charge MOSFET
• Ultra Low VF Schottky
• Pb−Free Package is Available

Applications
• Fast Switching, low Gate Charge for DC−to−DC Buck and Boost
   Converters
• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs,
   and Media Players
• Load Side Switching

Power MOSFET and Schottky Diode
−20 V, −3.0 A, Single P−Channel with
3.0 A Schottky Barrier Diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Similar Thermal
   Characteristics
• Independent Pinout to each Device to Ease Circuit Design
• Ultra Low VF Schottky
• Pb−Free Package is Available

Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products

Power MOSFET and Schottky Diode

20 V, 3.9 A, N−Channel, with 3.7 A
Schottky Barrier Diode, ChipFET

Features
• Leadless SMD Package Featuring a MOSFET and Schottky Diode
• 40% Smaller than TSOP−6 Package with Better Thermals
• Super Low Gate Charge MOSFET
• Ultra Low VF Schottky
• Pb−Free Package is Available

Applications
• Fast Switching, low Gate Charge for Dc to Dc Buck and Boost
   Converters
• Li−Ion Battery Applications in Cell Phones, PDAs, DSCs, and Media
   Players
• Load Side Switching

Power MOSFET and Schottky Diode
30 V, 5.7 A, Single N-Channel with 30 V,
2.8 A, Schottky Barrier Diode

Features
• FETKY Surface Mount Package Saves Board Space
• Independent Pin-Out for MOSFET and Schottky Allowing for
   Design Flexibility
• Low RDS(on) MOSFET and Low VF Schottky to Minimize
   Conduction Losses
• Optimized Gate Charge to Minimize Switching Losses
• This is a Pb-Free Device

Applications
• Disk Drives
• DC-DC Converters
• Printers

Power MOSFET and Schottky Diode
20 V, 4.6 A FETKY, N−Channel,
2.0 A Schottky Barrier Diode, DFN6

Features
• Flat Lead 6 Terminal Package 3x3x1 mm
• Reduced Gate Charge to Improve Switching Response
• Enhanced Thermal Characteristics
• This is a Pb−Free Device

Applications
• Buck Converter, Inverting Buck/Boost
• High Side DC−DC Conversion Circuits
• Power Management in Portable, HDD and Computing

Features
• Composite type composed of a low ON-resistance PChannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward-voltage Schottky Barrier Diode. Facilitates high-density mounting.
• The FX851 is formed with 2 chips, one being equivalent to the 2SJ187 and the other the SB07-03P, placed in one package.