VDSS = 600 V

ID25 = 18 A

RDS(on) ≤ 0.56 Ω

PDC = 350

Low Capacitance Z-MOSTM MOSFET Process

Optimized for RF Operation

Ideal for Class C, D, & E Applications

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced Z-MOS process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other hazardous materials

Advantages

• High Performance RF Z-MOS™

• Optimized for RF and high speed

• Common Source RF Package

A = Gate Source Drain

B = Drain Source Gate

• Isolated Package, no insulator required

• DESCRITION
• Improved transconductance

• FEATURES
• Static drain-source on-resistance: RDS(on)≤280mΩ
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

DESCRIPTION
• Low Drain-Source On-Resistance

FEATURES
• Drain Current –ID=20A@ TC=25℃
• Drain Source Voltage- : VDSS= 600V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• Switching application

• FEATURES
• With To-263(D2PAK) package
• Low input capacitance and gate charge
• Low gate input resistance
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

• APPLICATIONS
• Switching applications

DESCRIPTION

· High current ,high speed switching

· Switch mode power supplies

· DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver.

FEATURES

· Lower Input Capacitance

· Improved Gate Charge

· Extended Safe Operating Area

· Rugged Gate Oxide Technology

DESCRIPTION

· Drain Current –ID=5A@ TC=25℃

· Drain Source Voltage-

   : VDSS=900 (Min)

APPLICATIONS

· Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

·DESCRITION
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements

DESCRIPTION

·Drain Current –ID=30A@ TC=25℃

·Drain Source Voltage-

   : VDSS= 200V(Min)

·Static Drain-Source On-Resistance

   : RDS(on) =0.085Ω(Max)

·Nanosecond Switching Speed

APPLICATIONS

·Switching power supplies

·Switching converters,motor driver,relay driver

DESCRIPTION
• Drain Current ID=13A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 250V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) =0.28Ω(Max)

APPLICATIONS
• Switching power supplies
• Switching converters,motor driver,relay driver
• Audio amplifier and servo motors

Description
Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FEATURES
• Drain Current –ID= 162A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 40V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.004Ω (Max)
• Fast Switching