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IXYS CORPORATION
IXYS CORPORATION
Description : NChannel Enhancement Mode RF MOSFET

VDSS = 600 V

ID25 = 18 A

RDS(on) ≤ 0.56 Ω

PDC = 350



Low Capacitance Z-MOSTM MOSFET Process

Optimized for RF Operation

Ideal for Class C, D, & E Applications



Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced Z-MOS process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other hazardous materials



Advantages

• High Performance RF Z-MOS™

• Optimized for RF and high speed

• Common Source RF Package

A = Gate Source Drain

B = Drain Source Gate

• Isolated Package, no insulator required


Part Name(s) : ISPW15N60C3 SPW15N60C3
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

• DESCRITION
• Improved transconductance

• FEATURES
• Static drain-source on-resistance: RDS(on)≤280mΩ
• Enhancement mode:
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

Part Name(s) : STB26NM60N
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

DESCRIPTION
• Low Drain-Source On-Resistance

FEATURES
• Drain Current –ID=20A@ TC=25℃
• Drain Source Voltage- : VDSS= 600V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 165mΩ (Max)
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• Switching application

Part Name(s) : SPB02N60S5
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

• FEATURES
• With To-263(D2PAK) package
• Low input capacitance and gate charge
• Low gate input resistance
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

• APPLICATIONS
• Switching applications

Part Name(s) : IRFAC30
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

DESCRIPTION

· High current ,high speed switching

· Switch mode power supplies

· DC-AC converters for welding equipment and Uninterruptible power supplies and motor Driver.



FEATURES

· Lower Input Capacitance

· Improved Gate Charge

· Extended Safe Operating Area

· Rugged Gate Oxide Technology



 


Part Name(s) : 2SK1457 K1457
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

DESCRIPTION

· Drain Current –ID=5A@ TC=25℃

· Drain Source Voltage-

   : VDSS=900 (Min)



APPLICATIONS

· Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.



 


Part Name(s) : IRF530
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

·DESCRITION
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements

Part Name(s) : IRF250
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

DESCRIPTION

·Drain Current –ID=30A@ TC=25℃

·Drain Source Voltage-

   : VDSS= 200V(Min)

·Static Drain-Source On-Resistance

   : RDS(on) =0.085Ω(Max)

·Nanosecond Switching Speed



APPLICATIONS

·Switching power supplies

·Switching converters,motor driver,relay driver



 


Part Name(s) : IRF245
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

DESCRIPTION
• Drain Current ID=13A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 250V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) =0.28Ω(Max)

APPLICATIONS
• Switching power supplies
• Switching converters,motor driver,relay driver
• Audio amplifier and servo motors

Part Name(s) : IRF1404
Inchange Semiconductor
Inchange Semiconductor
Description : N-Channel MOSFET Transistor

Description
Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FEATURES
• Drain Current –ID= 162A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 40V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 0.004Ω (Max)
• Fast Switching

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