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Part name(s)' : BUR51
Description : HIGH CURRENT NPN SILICON TRANSISTOR
ST-Microelectronics
STMicroelectronics

DESCRIPTION
The BUR51 is a SILICON multiepitaxial planar NPN TRANSISTOR in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.

■ SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR

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Part name(s)' : 2SC3927 C3927
Description : SILICON NPN Triple Diffused Planar TRANSISTOR(High Voltage Switchihg TRANSISTOR)
SANKEN
Sanken Electric co.,ltd.

SILICON NPN Triple Diffused Planar TRANSISTOR(High Voltage Switchihg TRANSISTOR)



Application : Switching Regulator and General Purpose


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Part name(s)' : 8H01 TPCP8H01
Description : SILICON NPN Epitaxial Type, Field Effect TRANSISTOR SILICON N Channel MOS Type Multi-Chip TRANSISTOR
Toshiba
Toshiba

HIGH-SPEED SWITCHING APPLICATIONS

LORD SWITCHING APPLICATIONS

STROBE FLASH APPLICATIONS



• Multi-chip discrete device; built-in NPN TRANSISTOR for main switch and N-ch MOS FET for drive

• High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN TRANSISTOR)

• Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max)

                                                      (NPN TRANSISTOR)

• High-speed switching: tf = 25 ns (typ.) (NPN TRANSISTOR)



 


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Part name(s)' : BCX70G
Description : NPN EPITAXIAL SILICON TRANSISTOR
Samsung
Samsung

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

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Part name(s)' : BCW72
Description : NPN EPITAXIAL SILICON TRANSISTOR
Samsung
Samsung

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

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Part name(s)' : BCX70H
Description : NPN EPITAXIAL SILICON TRANSISTOR
Samsung
Samsung

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR

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Part name(s)' : BF370R
Description : NPN SILICON PLANAR TRANSISTOR
TEL
Transys Electronics Limited

NPN SILICON PLANAR TRANSISTOR

Low Level Amplifier TRANSISTOR.

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Part name(s)' : BFS20
Description : NPN SILICON Epitaxial Planar TRANSISTOR
Semtech-Electronics
Semtech Electronics LTD.

NPN SILICON Epitaxial Planar TRANSISTOR



High frequency TRANSISTOR for IF and VHF applications



 


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Part name(s)' : 8H02 TPCP8H02
Description : TOSHIBA Multi-Chip TRANSISTOR SILICON NPN Epitaxial Type, Field Effect TRANSISTOR SILICON N Channel MOS Type
Toshiba
Toshiba

STROBE FLASH APPLICATIONS

HIGH-SPEED SWITCHING APPLICATIONS

DC-DC CONVERTER APPLICATIONS



• Multi-chip discrete device; built-in NPN TRANSISTOR for main switch and N-ch MOS FET for drive

• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN TRANSISTOR)

• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

   (NPN TRANSISTOR)

• High-speed switching: tf = 25 ns (typ.) (NPN TRANSISTOR)



 


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