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Part Name(s) : BULD125KC
POINN
Power Innovations Ltd
Description : NPN SILICON transistor with integrated diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.

● Designed Specifically for High Frequency Electronic Ballasts
integrated Fast trr Anti-Parallel diode, Enhancing Reliability
diode trr Typically 1 µs
● Tightly Controlled transistor Storage Times
● Voltage Matched integrated transistor and diode
● Characteristics Optimised for Cool Running
diode-transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD85 BULD85KC
POINN
Power Innovations Ltd
Description : NPN SILICON transistor with integrated diode

description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.



● Designed Specifically for High Frequency Electronic Ballasts

integrated Fast trr Anti-Parallel diode, Enhancing Reliability

diode trr Typically 1 µs

● Tightly Controlled transistor Storage Times

● Voltage Matched integrated transistor and diode

● Characteristics Optimised for Cool Running

diode-transistor Charge Coupling Minimised to Enhance Frequency Stability



 


Part Name(s) : BULD85 BULD85KC
Power-Innovations
Power Innovations
Description : NPN SILICON transistor with integrated diode

description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.



● Designed Specifically for High Frequency Electronic Ballasts

integrated Fast trr Anti-Parallel diode, Enhancing Reliability

diode trr Typically 1 µs

● Tightly Controlled transistor Storage Times

● Voltage Matched integrated transistor and diode

● Characteristics Optimised for Cool Running

diode-transistor Charge Coupling Minimised to Enhance Frequency Stability



 


Part Name(s) : BULD125 BULD125KC
Power-Innovations
Power Innovations
Description : NPN SILICON transistor with integrated diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.

● Designed Specifically for High Frequency Electronic Ballasts
integrated Fast trr Anti-Parallel diode, Enhancing Reliability
diode trr Typically 1 µs
● Tightly Controlled transistor Storage Times
● Voltage Matched integrated transistor and diode
● Characteristics Optimised for Cool Running
diode-transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD125KC
Transys-Electronics
Transys Electronics Limited
Description : NPN SILICON transistor with integrated diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.

● Designed Specifically for High Frequency Electronic Ballasts
integrated Fast trr Anti-Parallel diode, Enhancing Reliability
diode trr Typically 1 µs
● Tightly Controlled transistor Storage Times
● Voltage Matched integrated transistor and diode
● Characteristics Optimised for Cool Running
diode-transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD125KC
TRSYS
Transys Electronics Limited
Description : NPN SILICON transistor with integrated diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.

● Designed Specifically for High Frequency Electronic Ballasts
integrated Fast trr Anti-Parallel diode, Enhancing Reliability
diode trr Typically 1 µs
● Tightly Controlled transistor Storage Times
● Voltage Matched integrated transistor and diode
● Characteristics Optimised for Cool Running
diode-transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD85KC
Transys-Electronics
Transys Electronics Limited
Description : NPN SILICON transistor with integrated diode

description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.



● Designed Specifically for High Frequency Electronic Ballasts

integrated Fast trr Anti-Parallel diode, Enhancing Reliability

diode trr Typically 1 µs

● Tightly Controlled transistor Storage Times

● Voltage Matched integrated transistor and diode

● Characteristics Optimised for Cool Running

diode-transistor Charge Coupling Minimised to Enhance Frequency Stability



 


Part Name(s) : BULD125KC BULD125
Transys
Transys Electronics
Description : NPN SILICON transistor with integrated diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor. The integrated diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel diode.

● Designed Specifically for High Frequency Electronic Ballasts
integrated Fast trr Anti-Parallel diode, Enhancing Reliability
diode trr Typically 1 µs
● Tightly Controlled transistor Storage Times
● Voltage Matched integrated transistor and diode
● Characteristics Optimised for Cool Running
diode-transistor Charge Coupling Minimised to Enhance Frequency Stability

Power-Innovations
Power Innovations
Description : NPN SILICON transistor with integrated diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor.

● Designed Specifically for High Frequency Electronic Ballasts
integrated Fast trr Anti-Parallel diode, Enhancing Reliability
diode trr Typically 1 µs
● New Low-Height SL power Package, TO220 Pin-Compatible
● Tightly Controlled transistor Storage Times
● Voltage Matched integrated transistor and diode
● Characteristics Optimised for Cool Running
diode-transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD50KC BULD50SL
POINN
Power Innovations Ltd
Description : NPN SILICON transistor with integrated diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor.

● Designed Specifically for High Frequency Electronic Ballasts
integrated Fast trr Anti-Parallel diode, Enhancing Reliability
diode trr Typically 1 µs
● New Low-Height SL power Package, TO220 Pin-Compatible
● Tightly Controlled transistor Storage Times
● Voltage Matched integrated transistor and diode
● Characteristics Optimised for Cool Running
diode-transistor Charge Coupling Minimised to Enhance Frequency Stability

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