Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :
Description : 5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer

GENERAL DESCRIPTION
The HMC558A is a general-purpose, double-balanced mixer in a leadless RoHS compliant SMT package that can be used as an upconverter or downconverter between 5.5 GHz and 14 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process, and requires no external components or matching circuitry.

FEATURES
   Conversion loss: 7.5 dB typical at 5.5 GHz to 10 GHz
   Local oscillator (LO) to radio frequency (RF) isolation: 45 dB
      typical at 5.5 GHz to 10 GHz
   LO to intermediate frequency (IF) isolation: 45 dB typical at
      10 GHz to 14 GHz
   Input third-order intercept (IIP3): 21 dBm typical at 10 GHz
      to 14 GHz
   Input P1dB: 11.5 dBm typical at 10 GHz to 14 GHz
   Input second-order intercept (IIP2): 55 dBm typical at 10 GHz
      to 14 GHz
   Passive double-balanced topology
   Wide IF bandwidth: dc to 6 GHz
   12-lead ceramic leadless chip carrier package

APPLICATIONS
   Point to point microwave radios
   Point to multipoint radios
   Military end use
   Instrumentation, automatic test equipment (ATE), and sensors

Part Name(s) : PE426525 PE426525A-X
Peregrine-Semiconductor
Peregrine Semiconductor
Description : UltraCMOS® SPDT RF Switch, 9 kHz–60 GHz

Product Description
The PE426525 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 9 kHz to 60 GHz. This wideband flip-chip switch is pin compatible to the PE42524 and the PE42525. It delivers low insertion loss, fast switching time and high isolation in the operating temperature of –55 °C to +125 °C. It is ideal for applications that require extended temperature support within this range, such as harsh industrial applications. At 50 GHz, the PE426525 exhibits 1.9 dB insertion loss and 37 dB isolation. No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE426525 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology.

Features
wideband support up to 60 GHz
• Low insertion loss
   ▪ 1.3 dB @ 26.5 GHz
   ▪ 1.7 dB @ 45 GHz
   ▪ 1.9 dB @ 50 GHz
   ▪ 2.7 dB @ 60 GHz
• Fast switching time of 8 ns
• High port to port isolation
   ▪ 41 dB @ 26.5 GHz
   ▪ 38 dB @ 45 GHz
   ▪ 37 dB @ 50 GHz
   ▪ 36 dB @ 60 GHz
• –55 °C to +125 °C operating temperature support
• High linearity: IIP3 of 48 dBm
• Flip-chip die, pin-to-pin compatible to the PE42524 and the PE42525

Applications
• Harsh industrial applications
• Applications that require extended temperature support in the range of –55 °C to +125 °C

Part Name(s) : UPC3210TB UPC3210TB-E3
NEC
NEC => Renesas Technology
Description : 5 V, SUPER MINIMOLD SILICON MMIC wideband AMPLIFIER

DESCRIPTION
The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band.
This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES
• High-density surface mounting: 6-pin super minimold package
• Supply voltage : VCC = 4.5 to 5.5 V
wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth
• Power gain : GP = 20 dB TYP. @f = 1.5 GHz
• Noise figure : NF = 3.4 dB TYP. @f = 1.5 GHz

APPLICATION
• Systems required wideband operation from HF to 2.0 GHz

Part Name(s) : BFP450H6327
Infineon
Infineon Technologies
Description : High Linearity Silicon Bipolar RF transistor

Product Brief
The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequency is approximately 24 GHz, hence the device offers high power gain at frequencies up to 3 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

Features
• Highly linear low noise driver amplifier for all RF frontends up to 3 GHz
• Based on Infineon´s reliable high volume 25 GHz silicon bipolar technology
• Output compression point OP1dB = 19 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
• Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
• Easy to use Pb-free (RoHS compliant) standard package with visible leads
• Qualification report according to AEC-Q101 available

Applications Examples
   Driver amplifier
   • ISM bands 434 and 868 MHz
   • 1.9 GHz cordless phones
   • CATV LNA

   Transmitter driver amplifier
   • 2.4 GHz WLAN and Bluetooth

   Output stage LNA for active antennas
   • TV, GPS, SDARS, 2.4 GHz WLAN, etc

   Suitable for 3 - 5.5 GHz oscillators

CEL
California Eastern Laboratories.
Description : NEC's 4.8 TO 5.85 GHz HIGH POWER GaAs MMIC SPDT SWITCH

DESCRIPTION
NECs UPG2022TB is a high power GaAs MMIC SPDT (Single Pole Double Throw) switch. This device can operate from 4.8 to 5.85 GHz with low insertion loss. It is housed in a compact, lead free 6-pin super minimold package.

FEATURES
• OPERATING FREQUENCY:
    f = 4.8 to 5.85 GHz
• LOW INSERTION LOSS:
    0.8 dB TYP. @ 4.9 to 5.2 GHz
    0.9 dB TYP. @ 5.8 GHz
• POWER HANDLING:
    Pin (0.1dB) = +30 dBm TYP. @ 4.9 to 5.2 GHz
    Pin (0.1dB) = +31 dBm TYP. @ 5.2 to 5.85 GHz
• CONTROL VOLTAGE:
    Vcont = +2.8 V/0 V
• HIGH ISOLATION:
    (Between INPUT and OUTPUT) = 29 dB TYP. @ 5.85 GHz
    (Between OUTPUT1 and OUTPUT2) = 18 dB TYP. @ 5.85 GHz
• INPUT/OUTPUT RETURN LOSS:
    10 dB MIN. @ 4.8 to 5.85 GHz
• SWITCHING SPEED:
    20 ns @ tRISE/tFALL (10/90% RF)
• 6-PIN SUPER MINIMOLD PACKAGE:
    (2.0 × 1.25 × 0.9 mm)
• LEAD FREE

APPLICATIONS
• 5 GHz BAND WLAN
• 5 GHz CORDLESS PHONES
• 5 GHz ELECTRONIC TOLL COLLECTION
• 5 GHz FIXED WIRELESS ACCESS

Description : 6 GHz to 10 GHz, GaAs, MMIC, I/Q Mixer

GENERAL DESCRIPTION
The HMC520A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband upconverter. The mixer uses two standard double balanced mixer cells and a 90° hybrid fabricated in a GaAs, metal semiconductor field effect transistor (MESFET) process. The HMC520A is a smaller alternative to a hybrid style image reject mixer and a single sideband upconverter assembly. The HMC520A eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques.

FEATURES
   RF range: 6 GHz to 10 GHz
   LO input frequency range: 6 GHz to 10 GHz
   Conversion loss: 8 dB typical at 6 GHz to 10 GHz
   Image rejection: 23 dBc typical at 6 GHz to 10 GHz
   LO to RF isolation: 43 dB typical
   LO to IF isolation: 25 dB typical
   Input IP3: 19 dBm typical
   Input P1dB compression: 10 dBm typical at 7.1 GHz to
      8.5 GHz
   Wide IF frequency range: dc to 3.5 GHz
   24-terminal, ceramic leadless chip carrier

APPLICATIONS
   Point to point microwave radios
   Point to multipoint radios
   Video satellites
   Digital radios
   Instrumentation
   Automatic test equipment

Part Name(s) : UPC3215TB UPC3215TB-E3
NEC
NEC => Renesas Technology
Description : 5 V, SUPER MINIMOLD SILICON MMIC wideband AMPLIFIER

DESCRIPTION
The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band.
This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. The package is 6-pin super minimold suitable for surface mount.

FEATURES
wideband response : fu = 2.9 GHz TYP. @3 dB bandwidth
• Noise figure : NF = 2.3 dB TYP. @f = 1.5 GHz
• Power gain : GP = 20.5 dB TYP. @f = 1.5 GHz
• Supply voltage : VCC = 4.5 to 5.5 V
• High-density surface mounting: 6-pin super minimold package

APPLICATION
• Systems required wideband operation from HF to L band

CEL
California Eastern Laboratories.
Description : 5V, SUPER MINIMOLD SI MMIC wideband AMPLIFIER

DESCRIPTION
The UPC3215TB is a Silicon Monolithic IC designed as a wideband amplifier. The UPC3215TB is suitable for systems requiring wideband operation from HF to L band.
This IC is manufactured using a 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. The package is 6-pin super minimold suitable for surface mount.

FEATURES
wideband RESPONSE:
    fu = 2.9 GHz TYP at 3dB bandwidth
• NOISE FIGURE:
    NF = 2.3 dB TYP at f = 1.5 GHz
• POWER GAIN:
    GP = 20.5 dB TYP at f = 1.5 GHz
• SUPPLY VOLTAGE:
    VCC = 4.5 to 5.5 V
• HIGH DENSITY SURFACE MOUNTING:
    6-pin super mini-mold package

APPLICATIONS
• Systems requiring wideband operation from HF to L band.
• DBS receivers and tuners

Description : wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T

GENERAL DESCRIPTION

The ADG904 and ADG904-R are wideband analog 4:1 multiplexers that use a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG904 is an absorptive/matched mux with 50 Ω terminated shunt legs; the ADG904-R is a reflective mux. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range.



FEATURES

wideband switch: –3 dB @ 2.5 GHz

ADG904: absorptive 4:1 mux/SP4T

ADG904-R: reflective 4:1 mux/SP4T

High off isolation (37 dB @ 1 GHz)

Low insertion loss (1.1 dB dc to 1 GHz)

Single 1.65 V to 2.75 V power supply

CMOS/LVTTL control logic

20-lead TSSOP and 4 mm × 4 mm LFCSP packages

Low power consumption (1 μA maximum)

Qualified for automotive applications


Description : wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS, 1.65 V to 2.75 V, Dual SPDT

GENERAL DESCRIPTION
The ADG936/ADG936-R are wideband analog switches that comprise two independently selectable SPDT switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG936 is an absorptive/matched dual SPDT with 50 Ω terminated shunt legs; the ADG936-R is a reflective dual SPDT. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. They have on-board CMOS control logic, eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited for wireless applications and general-purpose high frequency switching.

FEATURES
   wideband switch: −3 dB @ 4 GHz
   ADG936 absorptive dual SPDT
   ADG936-R reflective dual SPDT
   High off isolation (36 dB @ 1 GHz)
   Low insertion loss (0.9 dB dc to 1 GHz)
   Single 1.65 V to 2.75 V power supply
   CMOS/LVTTL control logic
   20-lead TSSOP and 4 mm × 4 mm LFCSP packages
   Low power consumption (1 μA maximum)

APPLICATIONS
   Wireless communications
   General-purpose RF switching
   Dual-band applications
   High speed filter selection
   Digital transceiver front end switch
   IF switching
   Tuner modules
   Antenna diversity switching

  

12345678910 Next



All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]