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MA-COM
M/A-COM Technology Solutions, Inc.
Description : GaAs SPDT Switch DC - 4 GHz

Description
M/A-COM’s SW-226/227/228-Pin are GaAs MMIC SPDT switches packaged in lead-free, surface mount CR-2 ceramic style packages. The SW-226- Pin is a terminated SPDT. The SW-227-Pin offers high isolation. The SW-228-Pin offers low insertion loss. This ceramic switch platform has a common footprint for all three designs. The CR-2 package is hermetically sealed, making these switches ideal for space, military radios, and other environmentally harsh applications.

Features
• Terminated (SW-226-Pin), High Isolation (SW-227-Pin), Low Loss (SW-228-Pin)
• Fast Switching Speed: 6 nS Typical
• Ultra Low DC Power Consumption
• Lead-Free 7-Lead Ceramic Package
• RoHS* Compliant and 260°C Reflow Compatible

MACOM
Tyco Electronics
Description : GaAs SPDT Switch DC - 4 GHz

Description
M/A-COM’s SW-226/227/228-Pin are GaAs MMIC SPDT switches packaged in lead-free, surface mount CR-2 ceramic style packages. The SW-226- Pin is a terminated SPDT. The SW-227-Pin offers high isolation. The SW-228-Pin offers low insertion loss. This ceramic switch platform has a common footprint for all three designs. The CR-2 package is hermetically sealed, making these switches ideal for space, military radios, and other environmentally harsh applications.

Features
• Terminated (SW-226-Pin), High Isolation (SW-227-Pin), Low Loss (SW-228-Pin)
• Fast Switching Speed: 6 nS Typical
• Ultra Low DC Power Consumption
• Lead-Free 7-Lead Ceramic Package
• RoHS* Compliant and 260°C Reflow Compatible

Description : 28/40/44-Pin Enhanced Flash Microcontrollers

DEVICE OVERVIEW
This document contains device specific information about the following devices:

• PIC16F873A
• PIC16F874A
• PIC16F876A
• PIC16F877A

PIC16F873A/876A devices are available only in 28-Pin packages, while PIC16F874A/877A devices are available in 40-Pin and 44-Pin packages. All devices in the PIC16F87XA family share common architecture with the following differences:
• The PIC16F873A and PIC16F874A have one-half of the total on-chip memory of the PIC16F876A and PIC16F877A
• The 28-Pin devices have three I/O ports, while the 40/44-Pin devices have five
• The 28-Pin devices have fourteen interrupts, while the 40/44-Pin devices have fifteen
• The 28-Pin devices have five A/D input channels, while the 40/44-Pin devices have eight
• The Parallel Slave Port is implemented only on the 40/44-Pin devices

Devices Included in this Data Sheet:
• PIC16F873A • PIC16F874A
• PIC16F876A • PIC16F877A

High-Performance RISC CPU:
• Only 35 single-word instructions to learn
• All single-cycle instructions except for program branches, which are two-cycle
• Operating speed: DC – 20 MHz clock input DC – 200 ns instruction cycle
• Up to 8K x 14 words of Flash Program Memory,
  Up to 368 x 8 bytes of Data Memory (RAM),
  Up to 256 x 8 bytes of EEPROM Data Memory
Pinout compatible to other 28-Pin or 40/44-Pin PIC16CXXX and PIC16FXXX microcontrollers

Peripheral Features:
• Timer0: 8-bit timer/counter with 8-bit prescaler
• Timer1: 16-bit timer/counter with prescaler, can be incremented during Sleep via external crystal/clock
• Timer2: 8-bit timer/counter with 8-bit period register, prescaler and postscaler
• Two Capture, Compare, PWM modules
   - Capture is 16-bit, max. resolution is 12.5 ns
   - Compare is 16-bit, max. resolution is 200 ns
   - PWM max. resolution is 10-bit
• Synchronous Serial Port (SSP) with SPI™ (Master mode) and I2C™ (Master/Slave)
• Universal Synchronous Asynchronous Receiver Transmitter (USART/SCI) with 9-bit address detection
• Parallel Slave Port (PSP) – 8 bits wide with external RD, WR and CS controls (40/44-Pin only)
• Brown-out detection circuitry for Brown-out Reset (BOR)

Analog Features:
• 10-bit, up to 8-channel Analog-to-Digital Converter (A/D)
• Brown-out Reset (BOR)
• Analog Comparator module with:
   - Two analog comparators
   - Programmable on-chip voltage reference (VREF) module
   - Programmable input multiplexing from device inputs and internal voltage reference
   - Comparator outputs are externally accessible

Special Microcontroller Features:
• 100,000 erase/write cycle Enhanced Flash program memory typical
• 1,000,000 erase/write cycle Data EEPROM memory typical
• Data EEPROM Retention > 40 years
• Self-reprogrammable under software control
• In-Circuit Serial Programming™ (ICSP™) via two Pins
• Single-supply 5V In-Circuit Serial Programming
• Watchdog Timer (WDT) with its own on-chip RC oscillator for reliable operation
• Programmable code protection
• Power saving Sleep mode
• Selectable oscillator options
• In-Circuit Debug (ICD) via two Pins

CMOS Technology:
• Low-power, high-speed Flash/EEPROM technology
• Fully static design
• Wide operating voltage range (2.0V to 5.5V)
• Commercial and Industrial temperature ranges
• Low-power consumption

Description : 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory

GENERAL DESCRIPTION
The A49LF040 flash memory device is designed to be readcompatible with the Intel Low Pin Count (LPC) Interface Specification 1.1. This device is designed to use a single low voltage, range from 3.0 Volt to 3.6 Volt power supply to perform in-system or off-system read and write operations. It provides protection for the storage and update of code and data in addition to adding system design flexibility through five general-purpose inputs. Two interface modes are supported by the A49LF040: Low Pin Count (LPC) Interface mode for In-System programming and Address/Address Multiplexed (A/A Mux) mode for fast factory programming of PC-BIOS applications.

FEATURES
• Single Power Supply Operation
    - Low voltage range: 3.0 V - 3.6 V for Read and Write Operations
• Standard Intel Low Pin Count Interface
    - Read compatible to Intel® Low Pin Count (LPC) interface
• Memory Configuration
    - 512K x 8 (4 Mbit)
• Block Architecture
    - 4Mbit: eight uniform 64KByte blocks
    - Supports full chip erase for Address/Address Multiplexed (A/A Mux) mode
• Automatic Erase and Program Operation
    - Embedded Byte Program and Block/Chip Erase algorithms
    - Typical 10 µs/byte programming time
    - Typical 1s block erase time
• Two Operational Modes
    - Low Pin Count Interface (LPC) Mode for in-system operation
    - Address/Address Multiplexed (A/A Mux) Interface Mode for programming equipment
• Low Pin Count (LPC) Mode
    - 33 MHz synchronous operation with PCI bus
    - 5-signal communication interface for in-system read and write operations
    - Standard SDP Command Set
    - Data# Polling (I/O7) and Toggle Bit (I/O6) features
    - 4 ID Pins for multi-chip selection
    - 5 GPI Pins for General Purpose Input Register
    - TBL# Pin for hardware write protection to Boot Block
    - WP# Pin for hardware write protection to whole memory array except Boot Block
• Address/Address Multiplexed (A/A Mux) Mode
    - 11-Pin multiplexed address and 8-Pin data I/O interface
    - Supports fast programming on EPROM programmers
    - Standard SDP Command Set
    - Data# Polling (I/O7) and Toggle Bit (I/O6) features
• Lower Power Consumption
    - Typical 12mA active read current
    - Typical 24mA program/erase current
• High Product Endurance
    - Guarantee 100,000 program/erase cycles for each block
    - Minimum 20 years data retention
• Compatible Pin-out and Packaging
    - 32-Pin (8 mm x 14 mm) TSOP (TYPE I)
    - 32-Pin PLCC

Description : 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory

General Description
The A49LF040A flash memory device is designed to be read-compatible with the Intel Low Pin Count (LPC) Interface Specification 1.1. This device is designed to use a single low voltage, range from 3.0 Volt to 3.6 Volt power supply to perform in-system or off-system read and write operations. It provides protection for the storage and update of code and data in addition to adding system design flexibility through five general-purpose inputs. Two interface modes are supported by the A49LF040A: Low Pin Count (LPC) Interface mode for In-System programming and Address/Address Multiplexed (A/A Mux) mode for fast factory programming of PC-BIOS applications.

FEATURES
• Single Power Supply Operation
    - Low voltage range: 3.0 V - 3.6 V for Read and Write Operations
• Standard Intel Low Pin Count Interface
    - Read compatible to Intel® Low Pin Count (LPC) interface
• Memory Configuration
    - 512K x 8 (4 Mbit)
• Block Architecture
    - 4Mbit: eight uniform 64KByte blocks
    - Supports full chip erase for Address/Address Multiplexed (A/A Mux) mode
• Automatic Erase and Program Operation
    - Embedded Byte Program and Block/Chip Erase algorithms
    - Typical 10 µs/byte programming time
    - Typical 1s block erase time
• Two Operational Modes
    - Low Pin Count Interface (LPC) Mode for in-system operation
    - Address/Address Multiplexed (A/A Mux) Interface Mode for programming equipment
• Low Pin Count (LPC) Mode
    - 33 MHz synchronous operation with PCI bus
    - 5-signal communication interface for in-system read and write operations
    - Standard SDP Command Set
    - Data Polling (I/O7) and Toggle Bit (I/O6) features
    - Block Locking Register for all blocks
    - 4 ID Pins for multi-chip selection
    - 5 GPI Pins for General Purpose Input Register
    - TBL Pin for hardware write protection to Boot Block
    - WP Pin for hardware write protection to whole memory array except Boot Block
• Address/Address Multiplexed (A/A Mux) Mode
    - 11-Pin multiplexed address and 8-Pin data I/O interface
    - Supports fast programming on EPROM programmers
    - Standard SDP Command Set
    - Data Polling (I/O7) and Toggle Bit (I/O6) features
• Lower Power Consumption
    - Typical 12mA active read current
    - Typical 24mA program/erase current
• High Product Endurance
    - Guarantee 100,000 program/erase cycles for each block
    - Minimum 20 years data retention
• Compatible Pin-out and Packaging
    - 32-Pin (8 mm x 14 mm) TSOP (TYPE I)
    - 32-Pin PLCC
    - Optional Pb-free (Lead-free) package
    - All Pb-free (Lead-free) products are RoHS compliant

Description : High Power Pin Diodes

Description
M/A-COM Technology Solutions MELF and HIPAX Pin Diode series are designed for usage in switch and attenuator applications requiring high power handling and low distortion. The MELF and HIPAX Pin Diodes incorporate a fully passivated Pin Diode chip resulting in an extremely low reverse bias leakage current. The semiconductor technology utilized in the MELF and HIPAX families draws on M/A-COM Tech’s substantial experience in Pin Diode design and wafer fabrication. The result is a device which has a thick I-region and long carrier lifetime while maintaining low series resistance and capacitance values. The chips of the MELF and HIPAX Pin Diodes are enclosed in a rugged ceramic package and is full face bonded to metal Pins on both the anode and cathode.

Features
♦ High Power Handling
♦ Low Loss / Low Distortion
♦ Voltage Ratings up to 1000 Volts
♦ Passivated Chip for Low Leakage Current
♦ Low Theta (θ) Due to Full Face Chip Bonding
♦ Leadless Low Inductance MELF Packages
♦ Various Package Options
♦ Available as Chips
♦ Fully RoHS Compliant
♦ Non-Magnetic Packages Available for MRI

Applications
   HIPAX Pin Diodes are designed for use in a wide variety of switch and attenuator applications from HF through UHF frequencies and at power levels above 1kW, CW. The internal chip as well as each Diode assembly has been comprehensively tested and characterized to ensure predictable and repeatable performance.

Part Name(s) : EL6253C EL6253CU
Elantec
Elantec -> Intersil
Description : 3-Channel Laser Diode Driver + Oscillator

General Description
The EL6253C is a high-performance three channel laser Diode current amplifier that provides controlled current to a grounded laser Diode. Amplifiers R and 2 can provide up to 120 mA per channel of DC or pulsed current whereas amplifier 3 can provide up to 240 mA. Channels 2 and 3 must be used as the write channels, with switching speeds of approximately one nanosecond rise/fall time. All three channels are summed together at the IOUT output, allowing the user to create multilevel waveforms in order to optimize laser Diode performance. The level of the output current is set by an analog voltage applied to an external resistor which converts the voltage into a current at the IIN Pin (virtually ground). The current seen at this Pin is then amplified by 100X to become a current source at Pin IOUT.
An on-chip 500 MHz oscillator is provided to allow current modulation when in the read mode. This is turned on when the OSCEN Pin is held high (floating not recommended). Complete control of amplitude and frequency is set by two external resistors connected to ground at Pins RFREQ and RAMP (see graphs in this data sheet for further explanation). The oscillator will also turn off whenever any of the OUTEN Pins for channels 2 or 3(the write channels) are low (see truth table).
Output current pulses are enabled when an ‘L’ signal is applied to the OUTEN Pin. No output current flows when OUTEN is ‘H’, and additional laser Diode protection is provided since the OUTEN input will float high when open. Complete IOUT shut-off is also achieved by holding the ENABLE Pin low, which will override the OUTEN control Pins.
The external resistors allow the user to accurately and independently set each amplifier transconductance by applying a voltage to each resistor, without restriction on the voltage range, thus ensuring broad voltage DAC compatibility. Alternatively, the IIN Pin can be biased from a current DAC or other current source.

Features
• Ultra-Small Package Outline
• Voltage-controlled output current source to 120 mA per channel, requiring one external set resistor per channel
• Current-controlled output current source to 120 mA per channel
• Rise time = 1.0 ns
• Fall time = 1.1 ns
• On chip oscillator with frequency and amplitude control by use of external resistors to ground
• Oscillator to 500 MHz
• Oscillator to 100 mA pk/pk
• Single +5V supply (±10%)
• Current amplification = 100
• Disable feature for power-up protection and power savings
• TTL/CMOS control signals

Applications
• CD-RW applications
• MO drives
• Writable optical drives
• Laser Diode current switching

Description : 5-Function Remote Controller / Package: 14-Pin DIP, 14-Pin SOIC, 16-Pin DIP and 16-Pin SOIC

The PTA977P (or 977W) and PT8A978P (or 978LW) provide a complete control functions to the remote controlled toy. The PT8A977P/977W has five input Pins corresponding with the five function buttons i.e, forward, backward, rightward, leftward and turbo.



The encoding circuit in the PT8A977P/977W sends digital codes to the two output Pins SO and SC. The digital codes correspond to the definite function buttons or their combinations. The SO and SC outputs are used in wireless and infra-red applications respectively.


Part Name(s) : BULD125KC
Transys-Electronics
Transys Electronics Limited
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
● Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

Part Name(s) : BULD125KC
POINN
Power Innovations Ltd
Description : NPN SILICON TRANSISTOR WITH INTEGRATED Diode

description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti parallel Diode. The revolutionary design ensures that the Diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel Diode plus transistor. The integrated Diode has minimal charge coupling with the transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated transistor and anti-parallel Diode.

● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability
Diode trr Typically 1 µs
● Tightly Controlled Transistor Storage Times
● Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

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