The UT69R000 is a versatile MicroController designed to meet real-time control type applications. Support functions often found external to a microprocessor are integrated within the MicroController. Functions include UART, interval timers, 10 external interrupt vectors, and a 8-bit output discrete bus.

Harvard architecture

- 64K data space

- 1M instruction space

High throughput engine

-  2 clocks per instruction

-  8 MIPS @ 16 MHz

-  Static design

15 levels of interrupts

-  8 external user defined interrupts

-  Machine error and power fail

Two on-board 16-bit interval timers

-  Timer A, 10 ms/bit

-  Timer B, 100 ms/bit resolution

8-bit software controlled output discrete bus

Register- oriented architecture has 21 user-accessible registers

-  16-bit or 32-bit register configurations

Supports direct memory access (DMA) system configuration

GENERAL DESCRIPTION
The UT1750AR (figures 1 and 2) is a high performance monolithic CMOS 16-bit RISC microprocessor that supports the complete MIL-STD-1750A Instruction Set Architecture (ISA). Underlying the MIL-STD-1750A support is a high-performance RISC that provides MIL-STD-1750A emulation capability. Developed to provide effective real-time avionics processing, the high performance of the native RISC machine is available to the MIL-STD-1750A systems designer through the MIL-STD-1750A Built-In-Function (BIF) opcode.
The UT1750AR is the first member of a family of high-performance MIL-STD-1750 processors and support peripherals from UTMC.

FEATURES
❐ Operates in either RISC (Reduced Instruction Set Computer) mode or MIL-STD-1750A mode
❐ Supports MIL-STD-1750A 32-bit floating-point operations and 48-bit extended-precision floating-point operations on chip
❐ Built-in 9600 baud UART
❐ Supports defined MIL-STD-1750A Console Mode of Operation
❐ Full 64K-word address space. Expandable to 1M words with optional MMU (operand port)
❐ Register-oriented architecture has 21 user-accessible registers
❐ Registers may be in 16-bit word or 32-bit double-word configurations
❐ Built-in multiprocessor bus arbitration and Direct Memory Access support (DMA)
❐ TTL-compatible I/O
❐ Stable 1.5-micron CMOS technology
❐ Full military operating range, -55°C to +125°C, in accordance with MIL-PRF-38535 for Class Q and V
❐ Typical radiation performance
   - Total dose: 1.0E6 rads(Si)
   - SEL Immune . 100 MeV-cm2/mg
   - LETTH(0.25) = 60 MeV-cm2/mg
   - Saturated Cross Section (cm2) per bit, 1.2E-7
   - 2.3E-11 errors/bit-day, Adams to 90% geosynchronous heavy ion
❐ Standard Military Drawing 5962-01502

HiRel RadHard Power-MOS

• Low RDS(on)
• Single Event Effect (SEE) hardened
   LET 73, Range: 253µm (Xe)    LET 55, Range: 95µm (Xe)
   VGS = -10V, VDS = 150V         VGS = -15V, VDS = 150V
   VGS = -15V, VDS = 80V           VGS = -20V, VDS = 100V
• Total Ionisation Dose (TID) hardened
   100 kRad (Level R)
• Hermetically sealed
• N-channel
• eesa Space Qualified
   ESA/SCC Detail Spec. No.: 5205/031
   Type Variant No. 01

HiRel RadHard Power-MOS

• Low RDS(on)
• Single Event Effect (SEE) hardened
   LET 73, Range: 253µm (Xe)   LET 55, Range: 95µm (Xe)
   VGS = -10V, VDS = 150V        VGS = -15V, VDS = 150V
   VGS = -15V, VDS = 80V          VGS = -20V, VDS = 100V
• Total Ionisation Dose (TID) hardened
   100 kRad approved (Level R)
• Hermetically sealed
• N-channel
• eesa Space Qualified
   ESA/SCC Detail Spec. No.: 5205/031
   Type Variant No. 03

HiRel RadHard Power-MOS

• Low RDS(on)
• Single Event Effect (SEE) hardened
   LET 73, Range: 253µm (Xe)   LET 55, Range: 95µm (Xe)
   VGS = -10V, VDS = 150V        VGS = -15V, VDS = 150V
   VGS = -15V, VDS = 80V          VGS = -20V, VDS = 100V
• Total Ionisation Dose (TID) hardened
   100 kRad approved
• Hermetically sealed
• N-channel
• eesa Space Qualified
   ESA/SCC Detail Spec. No.: 5205/031
   Type Variant No. 04

HiRel RadHard Power-MOS

• Low RDS(on)
• Single Event Effect (SEE) hardened
   LET 73, Range: 253µm (Xe)   LET 55, Range: 95µm (Xe)
   VGS = -10V, VDS = 150V        VGS = -15V, VDS = 150V
   VGS = -15V, VDS = 80V          VGS = -20V, VDS = 100V
• Total Ionisation Dose (TID) hardened
   100 kRad approved (Level R)
• Hermetically sealed
• N-channel
• eesa Space Qualified
   ESA/SCC Detail Spec. No.: 5205/031
   Type Variant No. 02

OVERVIEW AND GENERAL OPERATION

The chip is a fixed frequency Pulse Width Modulator based on the industry standard UC1843x Series with significant enhancements in performance and functionality. The chip operates in either the voltage or current mode and can support a wide variety of converter topologies.

Radiation hardened by design techniques ensure the chip’s outstanding radiation tolerance (>1MRads) while reducing operating current by more than an order of magnitude over comparable parts.

The PWM5031 provides an under voltage lockout feature with hysteresis that also provides an output to indicate Power is OK. An input called Sleep is used to power down the entire chip, the Enable input is used to shut down the Oscillator / Output Drives, and the Soft input drives the Output to zero. There is also a signal input called ENAUX that is used to disable the output to the auxiliary op-amp.

The dual output drivers are designed using a Totem Pole output capable of sinking and sourcing 50mA constant current and peak currents up to 1 Amp to support a large variety of Power MOSFETs.

FEATURES

❑ Radiation Hardness:

   - Total Dose 1MRad(Si)

   - Single Event Upset (SEU) 100MeV-cm2/mg

❑ CMOS Low Power Design

❑ Sleep & Enable Control Lines

❑ Optimized for Applications: Buck, Boost, Flyback, Forward and Center Tapped Push-Pull Converters

❑ Supports Current Mode or Voltage Mode Operations

❑ Selectable 50% / 100% Duty Cycle

❑ Under-Voltage Lockout with Hysteresis

❑ Dual ±1Amp Peak Totem Pole Outputs

❑ 1 MHz Maximum – User Selectable

❑ Low RO Error Amp

❑ Auxiliary Op Amp with Shut Down Pin

❑ Power OK Indicator

❑ Designed for Commercial, Industrial and Aerospace Applications

❑ Ceramic 24-Gull lead, Hermetic Package, .6L x .3W x .13H

   - Contact Factory for Die Availability

❑ DSCC SMD Pending

PRODUCT DESCRIPTION
The high-performance UT0.25μ Commercial RadHardTM ASIC structured array family features densities up to 3,000,000 equivalent gates and is available in multiple quality assurance levels such as MIL-PRF-38535, QML Q and V, military and industrial grades and non-RadHard versions.
For those designs requiring stringent radiation hardness, Aeroflex UTMC’s 0.25μ deep sub-micron process employs a special technique that enhances the total dose radiation hardness from 100Krads(Si) to 1 Megarad while maintaining circuit density and reliability. In addition, for both greater transient radiation hardness and latch-up immunity, the deep submicron process is built on epitaxial wafers.

FEATURES
❐ Up to 3,000,000 usable equivalent gates using structured array architecture
❐ Toggle rates up to 1.6 GHz
❐ Advanced 0.25m silicon gate CMOS processed in a commercial fab
❐ Operating voltage of 3.3V and 2.5V
❐ I/O buffers are 5-volt compliant
❐ Multiple product assurance levels available, QML Q and V, military, industrial
❐ Radiation hardened from 100Krads(Si) to 1 Megarad total dose available using Aeroflex UTMC’s RadHard techniques
❐ SEU-immune to less than 1.0E-10 errors/bits-day available using special library cells
❐ Robust Aeroflex UTMC Design Library of cells and macros
❐ Design support for Mentor Graphics®, SynopsysTM, in Verilog and VHDL design languages on Sun and Linux workstations
❐ Full complement of industry standard IP cores
❐ Configurable RAM compilers
❐ Supports cold sparing for power down applications
❐ Power dissipation of 0.04mW/MHz/gate at VDDCORE 2.5V and 20% duty cycle

RadHard MSI Logic SMD Cross Reference

RadHard MSI Logic SMD Cross Reference