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Description : Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,

32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.



FEATURES

Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory

- Supported by industry standard programmer

45ns and 40ns maximum address access time (-55oC to +125oC)

TTL compatible input and TTL/CMOS compatible output levels

Three-state data bus

Low operating and standby current

  - Operating: 125mA maximum @25MHz

      · Derating: 3mA/MHz

  - Standby: 2mA maximum (post-rad)

Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019

  - Total dose: 1E6 rad(Si)

  -  LETTH(0.25) ~ 100 MeV-cm2/mg

  -  SEL Immune  >128 MeV-cm2/mg

  - Saturated Cross Section cm2 per bit, 1.0E-11

  - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion

  - Memory cell LET threshold: >128 MeV-cm2/mg

QML Q & V compliant part

  - AC and DC testing at factory

Packaging options:

  - 28-lead 50-mil center flatpack (0.490 x 0.74)

  - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

VDD: 5.0 volts +  10%

Standard Microcircuit Drawing 5962-96891



 


Description : Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION

The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LV. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256LV ideal for high speed systems designed for operation in radiation environments.



FEATURES

Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory

- Supported by industry standard programmer

65ns maximum address access time (-55oC to +125oC)

Three-state data bus

Low operating and standby current

- Operating: 50.0mA maximum @15.4MHz

· Derating: 1.5mA/MHz

- Standby: 1.0mA maximum (post-rad)

Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019

- Total dose: 1E6 rad(Si)

-  LETTH (0.25) ~ 100 MeV-cm2/mg

-  SEL Immune  >128 MeV-cm2/mg

- Saturated Cross Section cm2 per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion

- Memory cell LET threshold: >128 MeV-cm2/mg

QML Q & V compliant part

- AC and DC testing at factory

Packaging options:

- 28-lead 50-mil center flatpack (0.490 x 0.74)

- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

VDD : 3.0Vto 3.6V

Standard Microcircuit Drawing 5962-01517



 


Description : Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,

32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.



FEATURES

Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory

- Supported by industry standard programmer

45ns and 40ns maximum address access time (-55oC to +125oC)

TTL compatible input and TTL/CMOS compatible output levels

Three-state data bus

Low operating and standby current

  - Operating: 125mA maximum @25MHz

      · Derating: 3mA/MHz

  - Standby: 2mA maximum (post-rad)

Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019

  - Total dose: 1E6 rad(Si)

  -  LETTH(0.25) ~ 100 MeV-cm2/mg

  -  SEL Immune  >128 MeV-cm2/mg

  - Saturated Cross Section cm2 per bit, 1.0E-11

  - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion

  - Memory cell LET threshold: >128 MeV-cm2/mg

QML Q & V compliant part

  - AC and DC testing at factory

Packaging options:

  - 28-lead 50-mil center flatpack (0.490 x 0.74)

  - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

VDD: 5.0 volts +  10%

Standard Microcircuit Drawing 5962-96891



 


Description : Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION

The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LV. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256LV ideal for high speed systems designed for operation in radiation environments.



FEATURES

Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory

- Supported by industry standard programmer

65ns maximum address access time (-55oC to +125oC)

Three-state data bus

Low operating and standby current

- Operating: 50.0mA maximum @15.4MHz

· Derating: 1.5mA/MHz

- Standby: 1.0mA maximum (post-rad)

Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019

- Total dose: 1E6 rad(Si)

-  LETTH (0.25) ~ 100 MeV-cm2/mg

-  SEL Immune  >128 MeV-cm2/mg

- Saturated Cross Section cm2 per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion

- Memory cell LET threshold: >128 MeV-cm2/mg

QML Q & V compliant part

- AC and DC testing at factory

Packaging options:

- 28-lead 50-mil center flatpack (0.490 x 0.74)

- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory

VDD : 3.0Vto 3.6V

Standard Microcircuit Drawing 5962-01517



 


Description : 32K x 8 Reprogrammable Registered PROM

Functional Description

The CY7C277 is a high-performance 32K word by 8-bit CMOS PROMs. It is packaged in the slim 28-pin 300-mil package. The ceramic package may be equipped with an erasure window; when exposed to UV light, the PROM is erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide algorithms.

The CY7C277 offers the advantages of low power, superior performance, and high programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be 100% tested, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming.



Features

• Windowed for reprogrammability

• CMOS for optimum speed/power

• High speed

   — 30-ns address set-up

   — 15-ns clock to output

• Low power

   — 60 mW (commercial)

   — 715 mW (military)

• Programmable address latch enable input

• Programmable synchronous or asynchronous output enable

• On-chip edge-triggered output registers

• EPROM technology, 100% programmable

• Slim 300-mil, 28-pin plastic or hermetic DIP

• 5V ±10% VCC, commercial and military

• TTL-compatible I/O

• Direct replacement for bipolar PROMs

• Capable of withstanding greater than 2001V static discharge



 


Description : 256K (32K x 8) UV ERASABLE PROM

256K (32K x 8) UV ERASABLE PROM

The Intel 27256 is a 5V only, 262,144-bit ultraviolet Erasable and Electrically Programmable Read Only Memory (EPROM). Organized as 32K words by 8 bits, individual bytes are accessed in under 250ns.

Description : 256K(32K x 8) UV ERASABLE PROM

256K(32K x 8) UV ERASABLE PROM

Intel
Intel
Description : 32K (4K X 8) UV ERASABLE PROM

32K (4K X 8) UV ERASABLE PROM

The Intel M2732A is a 5V only, 32,768 bit ultraviolet erasable and electrically programmable read-only memory (EPROM). The standard M2732As access time is 450 ns with speed selection (M2732A-25) available at 250 ns. The access time is compatible to high performance microprocessors, such as the 5 MHz mIAPX 86/10. in these systems, the M2732A allows the microprocessor to operate without the addition of WAIT states.

■ 250 ns (M2732A-25) Maximum Access Time ... HMOS* -E Technology
■ Compatible to High Speed 5 MHz MiPAX 86/10 MPU ... Zero Wait State
■ Military Temperature Range: -55°C to +125°C (TC)
■ Industry Standard Pinout ... JEDEC Approved
■ Two Line Control
■ Low Standby Current ... 35 mA Max.

Description : 32K x 8 Power Switched and Reprogrammable PROM

unctional Descriptio
The CY7C271A is a high-performance 32,768-word by 8-bit CMOS PROM. When disabled (CE HIGH), the 7C271A automatically powers down into a low-power stand-by mode. The CY7C271A is packaged in the 300-mil slim package and is available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

Features
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
  — 25 ns (Commercial)
• Low power
  — 275 mW (Commercial)
• Super low standby power
   — Less than 85 mW when deselected
• EPROM technology 100%programmable
• Slim 300-mil package
• Direct replacement for bipolar PROMs
• Capable of withstanding >4001V static discharge

Description : 32K x 8 Power Switched and Reprogrammable PROM

Functional Description

The CY7C271 and CY7C274 are high-performance 32,768-word by 8-bit CMOS PROMs. When disabled (CE HIGH), the 7C271/7C274 automatically powers down into alow-power stand-by mode. The CY7C271 is packaged in the 300-mil slim package. The CY7C274 is packaged in the industry standard 600-mil package. Both the CY7C271 and CY7C274 are available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.



Features

• CMOS for optimum speed/power

• Windowed for reprogrammability

• High speed

— 30 ns (Commercial)

— 35 ns (Military)

• Low power

— 660 mW (commercial)

— 715 mW (military)

• Super low standby power

— Less than 165 mW when deselected

• EPROM technology 100% programmable

• Slim 300-mil package (7C271)

• Direct replacement for bipolar PROMs

• Capable of withstanding >2001V static discharge


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