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Description : 8K x 8 Registered PROM

Functional Description
The CY7C265 is a 8192 x 8 registered PROM. It is organized as 8,192 words by 8 bits wide, and has a pipeline output register. In addition, the device features a programmable initialize byte that may be loaded into the pipeline register with the initialize signal. The programmable initialize byte is the 8,193rd byte in the PROM and its value is programmed at the time of use.

Features
• CMOS for optimum speed/power
• High speed (Commercial)
   — 15 ns address set-up
   — 12 ns clock to output
• Low power
   — 660 mW (Commercial)
• On-chip edge-triggered registers
   — Ideal for pipelined microprogrammed systems
• EPROM technology
   — 100% programmable
   — Reprogrammable (CY7C265W)
• 5V ±10% VCC, commercial and military
• Capable of withstanding >2001V static discharge
• Slim 28-pin, 300-mil plastic or hermetic DIP

Description : 8K x 8 Registered PROM (Rev - 2006)

Functional Description
The CY7C265 is a 8192 x 8 registered PROM. It is organized as 8,192 words by 8 bits wide, and has a pipeline output register. In addition, the device features a programmable initialize byte that may be loaded into the pipeline register with the initialize signal. The programmable initialize byte is the 8,193rd byte in the PROM and its value is programmed at the time of use.

Features
• CMOS for optimum speed/power
• High speed (Commercial)
   — 15 ns address set-up
   — 12 ns clock to output
• Low power
   — 660 mW (Commercial)
• On-chip edge-triggered registers
   — Ideal for pipelined microprogrammed systems
• EPROM technology
   — 100% programmable
   — Reprogrammable (CY7C265W)
• 5V ±10% VCC, commercial and military
• Capable of withstanding >2001V static discharge
• Slim 28-pin, 300-mil plastic or hermetic DIP

Description : Radiation-Hardened 8K x 8 PROM

PRODUCT DESCRIPTION
The UT28F64LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64LV. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64LV ideal for high speed systems designed for operation in radiation environments.

FEATURES
❐ Programmable, read-only, asynchronous, RadiationHardened, 8K x 8 memory
   - Supported by industry standard programmer
❐ 55ns maximum address access time (-55 °C to +125 °C)
❐ Three-state data bus
❐ Low operating and standby current
   - Operating: 50mA maximum @18.2 MHz
      • Derating: 1.5mA/MHz
   - Standby: 500mA maximum (post-rad)
❐ Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
   - Total dose: 1E6 rad(Si)
   - LETTH(0.25) ~ 100 MeV-cm2/mg
   - SEL Immune >128 MeV-cm2/mg
      - Saturated Cross Section cm2 per bit, 1.0E-11
         - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
   - Memory cell LET threshold: >128 MeV-cm2/mg
❐ QML Q & V compliant part
   - AC and DC testing at factory
❐ Packaging options:
   - 28-pin 100-mil center DIP (0.600 x 1.4)
   - 28-lead 50-mil center flatpack (0.490 x 0.74)
❐ VDD: 3.0 to 3.6volts
❐ Standard Microcircuit Drawing 5962-01516

Description : Radiation-Hardened 8K x 8 PROM

PRODUCT DESCRIPTION

The UT28F64 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64 ideal for high speed

systems designed for operation in radiation environments.



EATURES

Programmable, read-only, asynchronous, radiation hardened, 8K x 8 memory

- Supported by industry standard programmer

35ns and 45ns maximum address access time (-55oC to +125oC)

TTL compatible input and TTL/CMOS compatible output levels

Three-state data bus

Low operating and standby current

- Operating: 100mA maximum @28.6MHz

  · Derating: 3mA/MHz

- Standby: 500mA maximum (post-rad)

Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019

- Total dose: 1E6 rad(Si)

-  LETTH (0.25) ~ 100 MeV-cm2/mg

-  SEL Immune  >128 MeV-cm2/mg

- Saturated Cross Section cm2 per bit, 1.0E-11

- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion

- Memory cell LET threshold: >128 MeV-cm2/mg

QML Q & V compliant part

- AC and DC testing at factory

Packaging options:

- 28-pin 100-mil center DIP (0.600 x 1.4)

- 28-lead 50-mil center flatpack (0.490 x 0.74)

VDD: 5.0 volts +  10%

Standard Microcircuit Drawing 5962-96873


Description : Radiation-Hardened 8K x 8 PROM

PRODUCT DESCRIPTION
The UT28F64 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 8K x 8 programmable memory device. The UT28F64 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F64. The combination of radiation- hardness, fast access time, and low power consumption make the UT28F64 ideal for high speed systems designed for operation in radiation environments.

FEATURES
❐ Programmable, read-only, asynchronous, RadiationHardened, 8K x 8 memory
   - Supported by industry standard programmer
❐ 35ns and 45ns maximum address access time (-55 oC to +125 oC)
❐ TTL compatible input and TTL/CMOS compatible output levels
❐ Three-state data bus
❐ Low operating and standby current
   - Operating: 100mA maximum @28.6MHz
      • Derating: 3mA/MHz
   - Standby: 500mA maximum (post-rad)
❐ Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
   - Total dose: 1E6 rad(Si)
   - LETTH(0.25) ~ 100 MeV-cm2/mg
   - SEL Immune >128 MeV-cm2/mg
   - Saturated Cross Section cm2 per bit, 1.0E-11
   - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
   - Memory cell LET threshold: >128 MeV-cm2/mg
❐ QML Q & V compliant part
   - AC and DC testing at factory
❐ Packaging options:
   - 28-pin 100-mil center DIP (0.600 x 1.4)
   - 28-lead 50-mil center flatpack (0.490 x 0.74)
❐ VDD: 5.0 volts + 10%
❐ Standard Microcircuit Drawing 5962-96873

Description : 8K (1K x 8) BIPOLAR PROM

8K (1K x 8) BIPOLAR PROM

The Intel 3628A is a fully decoded 8192-bit PROM organized as 1024 words by 8 bits.

Description : 8K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION
The IS25C08B is an 8Kbit (1024x 8) electrically erasable PROM devices that use the Serial Peripheral Interface (SPI) for communications.
This EEPROM operates in a wide voltage range of 1.8V to 5.5V to be compatible with most application voltages. ISSI designed this device to be a practical, low-power SPI EEPROM solution. The devices are offered in lead-free, RoHS, halogen free or Green. The available package types are 8-pin SOIC, TSSOP, UDFN and CSP.

FEATURES
•  Serial Peripheral Interface (SPI) Compatible
    — Supports SPI Modes 0 (0,0) and 3 (1,1)
•  Wide-voltage Operation
    — Vcc = 1.8V to 5.5V
•  Low power CMOS
 — Operating current less than 1 mA (1.8V)
 — Standby current less than 1 µA (1.8V)
•  Block Write Protection
    — Protect 1/4, 1/2, or Entire Array
•  32-byte page write mode
      — Partial page writes allowed
•  20 MHz Clock Rate (5V)
•  Self timed write cycles (5 ms Typical)
•  High-reliability
    — Endurance: 1 million cycles per byte
    — Data retention: 100 years
•  Industrial grade
•  Packages: SOIC/SOP, TSSOP, UDFN and CSP

Description : 8K x 8 Power-Switched and Reprogrammable PROM

Functional Description

The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected, the 7C261 automatically powers down into a low-power stand by mode. It is packaged in a 300-mil-wide package. The 7C263 and 7C264 are packaged in 300-mil-wide and 600-mil-wide packages respectively, and do not power down when deselected. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide in telligent programming algorithms.

The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar devices and offer the advantages of lower power, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet DC and AC specification limits.



Features

• CMOS for optimum speed/power

• Windowed for reprogrammability

• High speed

   — 20 ns (commercial)

   — 25 ns (military)

• Low power

   — 660 mW (commercial)

   — 770 mW (military)

• Super low standby power (7C261)

   — Less than 220 mW when deselected

   — Fast access: 20 ns

• EPROM technology 100% programmable

• Slim 300-mil or standard 600-mil packaging available

• 5V ± 10% VCC, commercial and military

• Capable of withstanding greater than 2001V static discharge

• TTL-compatible I/O

• Direct replacement for bipolar PROMs



 


Description : 64K (8K x 8) CMOS Electrically Erasable PROM

DESCRIPTION
The Microchip Technology Inc. 28C64B is a CMOS 64K bit Electrically Erasable and Programmable Read only Memory. The devices is organized as 8K words by 8 bits (8K bytes).

Part Name(s) : M2764A M2764A-25
Intel
Intel
Description : AVDVANCED 64K (8K x 8) UV ERASABLE PROM


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